CYD09S18V18-167BBXC Cypress Semiconductor Corp, CYD09S18V18-167BBXC Datasheet - Page 37

• Manufacturer Part Number: CYD09S18V18-167BBXC
• Description: IC SRAM 9MBIT 167MHZ 256LFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CYD09S18V18-167BBXC

• Format - Memory: RAM
• Memory Type: SRAM - Dual Port, Synchronous
• Memory Size: 9M (512K x 18)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 256-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Waveforms
Notes
Document Number: 38-06082 Rev. *J
59. When OE = V
60. Two dummy writes are issued to accomplish bus turnaround. The third instruction is the first valid write.
61. Chip enable or all byte enables are held inactive during the two dummy writes to avoid data corruption.
62. OE is deasserted and t
63. Any write scheduled to complete after OE is deasserted is pre-empted.
R/W
DQ
R/W
OE
C
DQ
A
C
A
DQ
DQ
t
CKLZ2
A
IL
A
x-2
, the last read operation is enabled to complete before the DQ bus is tri-stated and the user is enabled to drive write data.
x
x-2
x
t
CD2
t
CH
t
CYC
t
OHZ
CYC
enabled to elapse before the first write operation is issued.
DQ
t
DQ
t
CL
t
SAC
SAC
Figure 27. READ-to-WRITE for Pipelined Mode (OE Controlled)
A
x-1
Figure 26. READ-to-WRITE for Pipelined Mode (OE = V
x-1
x+1
(continued)
t
t
t
HAC
HAC
DC
DQ
A
x
DQ
n
A
x
t
x+2
OHZ
t
CKHZ2
t
SD
DQ
DQ
A
n
n
n
t
HD
DQ
DQ
A
A
n+1
n+1
n+1
n+1
IL
)
[59, 60, 61]
t
SAC
DQ
t
[62, 63]
SD
DQ
A
A
n+2
n+2
n+2
n+2
t
t
HAC
HD
DQ
A
n+3
n+3
Page 37 of 52
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