VS-8EWH06FNTR-M3 Vishay Semiconductors, VS-8EWH06FNTR-M3 Datasheet - Page 4

• Manufacturer Part Number: VS-8EWH06FNTR-M3
• Description: Rectifiers Hyperfast 8A 600V 18ns
• Manufacturer: Vishay Semiconductors

Specifications of VS-8EWH06FNTR-M3

• Product Category: Rectifiers
• Rohs: yes
• Product: Fast Recovery Rectifiers
• Configuration: Single
• Reverse Voltage: 600 V
• Forward Voltage Drop: 2 V
• Recovery Time: 18 ns
• Forward Continuous Current: 8 A
• Max Surge Current: 90 A
• Reverse Current Ir: 50 uA
• Mounting Style: SMD/SMT
• Package / Case: DPAK

VS-8EWH06FN-M3
Vishay Semiconductors
Note
(1)
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4
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Formula used: T
Pd = Forward power loss = I
Pd
REV
180
170
160
150
140
130
120
110
Fig. 5 - Maximum Allowable Case Temperature vs.
= Inverse power loss = V
20
18
16
14
12
10
8
6
4
2
0
Fig. 6 - Forward Power Loss Characteristics
0
0
Square wave (D=0.50)
rated Vr applied
see note (1)
Average Forward Current - I
Average Forward Current - I
2
C
2
Average Forward Current
= T
4
J
- (Pd + Pd
4
[e-mail], [e-mail],
6
DC
F(AV)
For technical questions within your region, please contact one of the following:
6
R1
8
x V
REV
RMS Limit
x I
8
FM
) x R
R
10
(1 - D); I
F
at (I
D = 0.01
D = 0.02
D = 0.05
(AV)
DC
F
D = 0.1
D = 0.2
D = 0.5
thJC
(AV)
10
Hyperfast Rectifier, 8 A FRED Pt
12
F(AV)
(A)
;
(A)
This document is subject to change without notice.
R
/D) (see fig. 6);
at V
14
12
R1
= Rated V
New Product
R
Fig. 7 - Typical Reverse Recovery Time vs. dI
350
300
250
200
150
100
[e-mail]
50
50
45
40
35
30
25
20
15
10
0
1
1
Fig. 8 - Typical Stored Charge vs. dI
0
0
0
0
®
8A, Tj = 125°C
di
di
8A, Tj = 25°C
F
F
/dt (A/μs )
/dt (A/μs )
8A, Tj = 125°C
8A, Tj = 25°C
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Document Number: 93238
Revision: 05-Apr-11
F
/dt
1
1
0
0
0
0
F
0
0
/dt