VS-8EWH06FNTR-M3 Vishay Semiconductors, VS-8EWH06FNTR-M3 Datasheet

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VS-8EWH06FNTR-M3

Manufacturer Part Number
VS-8EWH06FNTR-M3
Description
Rectifiers Hyperfast 8A 600V 18ns
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-8EWH06FNTR-M3

Product Category
Rectifiers
Rohs
yes
Product
Fast Recovery Rectifiers
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
2 V
Recovery Time
18 ns
Forward Continuous Current
8 A
Max Surge Current
90 A
Reverse Current Ir
50 uA
Mounting Style
SMD/SMT
Package / Case
DPAK

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VS-8EWH06FNTR-M3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
VS-8EWH06FNTR-M3
Quantity:
70 000
Document Number: 93238
Revision: 05-Apr-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
Reverse leakage current
Junction capacitance
Series inductance
D-PAK (TO-252AA)
Diode variation
Package
T
t
V
rr
J
I
F
F(AV)
V
(typ.)
max.
at I
R
F
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
Hyperfast Rectifier, 8 A FRED Pt
SYMBOL
D-PAK (TO-252AA)
V
V
V
C
L
BR
I
R
R
S
F
N/C
T
,
Single die
1
175 °C
600 V
18 ns
2.4 V
This document is subject to change without notice.
8 A
J
2, 4
I
I
I
V
T
V
Measured lead to lead 5 mm from package body
3
Anode
= 25 °C unless otherwise specified)
R
F
F
R
J
R
SYMBOL
= 8 A
= 8 A, T
= 100 μA
= 150 °C, V
T
= V
= 600 V
V
I
J
I
F(AV)
FSM
I
, T
RRM
FM
R
Stg
rated
New Product
J
= 150 °C
TEST CONDITIONS
R
= V
T
T
T
C
J
C
= 25 °C
= 143 °C
= 143 °C, f = 20 kHz, d = 50 %
R
rated
TEST CONDITIONS
FEATURES
• Hyperfast recovery time, reduced Q
• 175 °C maximum operating junction temperature
• For PFC CRM/CCM operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
• Compliant to RoHS Directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21 definition
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS inverters or as freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
recovery
peak of 260 °C
DiodesEurope@vishay.com
Vishay Semiconductors
VS-8EWH06FN-M3
®
MIN.
600
-
-
-
-
-
-
- 65 to 175
VALUES
600
90
16
8
www.vishay.com/doc?91000
TYP.
2.0
1.3
8
8
-
-
-
rr
and soft
MAX.
500
2.4
1.8
www.vishay.com
50
-
-
-
UNITS
°C
V
A
UNITS
μA
nH
pF
V
1

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VS-8EWH06FNTR-M3 Summary of contents

Page 1

... V rated 150 ° rated 600 V R Measured lead to lead 5 mm from package body DiodesEurope@vishay.com This document is subject to change without notice. VS-8EWH06FN-M3 Vishay Semiconductors ® and soft rr VALUES UNITS 600 175 °C MIN. TYP. ...

Page 2

... VS-8EWH06FN-M3 Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T PARAMETER SYMBOL Reverse recovery time t rr Peak recovery current I RRM Reverse recovery charge Q rr THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage Stg temperature range Thermal resistance, R thJC junction to case per leg Approximate weight Marking device www ...

Page 3

... THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT New Product Hyperfast Rectifier FRED Pt 1000 100 10 1 0.1 0.01 0.001 0 Fig Typical Values of Reverse Current vs. 100 (V) Fig Typical Junction Capacitance vs. Reverse Voltage Single Pulse (Thermal Resistance) 1E-04 1E-03 ...

Page 4

... THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT New Product Hyperfast Rectifier FRED ( Fig Typical Reverse Recovery Time vs. dI 350 300 250 200 150 100 (A) 0 (AV) 1 Fig Typical Stored Charge vs ...

Page 5

... I RRM Q /dt - peak rate of change of (5) dI (rec)M current during t and 0.50 I RRM RRM Fig Reverse Recovery Waveform and Definitions DiodesEurope@vishay.com This document is subject to change without notice. VS-8EWH06FN-M3 ® Vishay Semiconductors ( RRM (5) / RRM = ...

Page 6

... ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R VS-8EWH06FN-M3 VS-8EWH06FNTR-M3 VS-8EWH06FNTRL-M3 VS-8EWH06FNTRR-M3 Dimensions Part marking information Packaging information SPICE model www.vishay.com For technical questions within your region, please contact one of the following: 6 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 7

... H 0.035 L 0.045 L1 0.215 3 L2 0.024 L3 0.035 L4 0.245 Ø 0.265 5 Ø Ø2 1 Outline Dimensions Vishay Semiconductors Pad layout 0.265 MIN. (6.74 0.488 (12.40) 0.409 (10.40 0.06 MIN. (1.524) 0.093 (2.38) 0.085 (2.18) H (7) C Seating plane MILLIMETERS INCHES MIN. MAX. MIN. MAX. 2.29 BSC 0.090 BSC 9 ...

Page 8

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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