W9425G6JH-5 Winbond Electronics, W9425G6JH-5 Datasheet - Page 25

• Manufacturer Part Number: W9425G6JH-5
• Description: IC DDR-400 SDRAM 256MB 66TSSOPII
• Manufacturer: Winbond Electronics

Specifications of W9425G6JH-5

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOPII
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

9.5
I
SYM.
I
I
I
I
I
I
I
DD4W
DD2N
DD2Q
DD3N
DD4R
I
I
DD2P
DD2F
DD3P
I
I
I
DD0
DD1
DD5
DD6
DD7
DC Characteristics
Operating current: One Bank Active-Precharge;
t
DQ, DM and DQS inputs changing once per clock cycle;
Address and control inputs changing once every two clock cycles
Operating current: One Bank Active-Read-Precharge;
Burst = 4; t
and control inputs changing once per clock cycle.
Precharge Power Down standby current:
All Banks Idle; Power down mode;
CKE < V
Idle standby current:
Address and other control inputs changing once per clock cycle;
Vin > V
Precharge floating standby current:
Address and other control inputs changing once per clock cycle;
V
Precharge quiet standby current:
Address and other control inputs stable at > V
Vin = V
Active Power Down standby current:
One Bank Active; Power down mode;
CKE < V
Vin = V
Active standby current:
t
DQ, DM and DQS inputs changing twice per clock cycle;
Address and other control inputs changing once per clock cycle
Operating current:
Burst = 2; Reads; Continuous burst; One Bank Active;
Address and control inputs changing once per clock cycle;
CL=2; t
Operating current:
Burst = 2; Write; Continuous burst; One Bank Active;
Address and control inputs changing once per clock cycle;
CL = 2; t
DQ, DM and DQS inputs changing twice per clock cycle
Auto Refresh current: t
Self Refresh current: CKE < 0.2V
Random Read current: 4 Banks Active Read with activate every
20nS, Auto-Precharge Read every 20 nS;
Burst = 4; t
DQ, DM and DQS inputs changing twice per clock cycle;
Address changing once per clock cycle
CS
CS > V
CS
CS
RC
RC
IN
= t
= V
= t
> V
> V
> V
RC
RAS
REF
IH
IH
REF
REF
CK
IH
IH
IH
CK
IL
IL
min; t
min; all banks idle; CKE > V
min or Vin < V
min; all banks idle; CKE > V
max; t
= t
for
max; t
min; All Banks Idle; CKE > V
max; t
min; CKE > V
RC
RCD
for DQ, DQS and DM.
for DQ, DQS and DM
= t
CK
DQ, DQS and DM
= t
CK
CK
= 3; I
min; I
CK
RC
CK
CK
min;
= t
= t
min; CL = 3; t
= t
= t
CK
OUT
OUT
CK
CK
CK
RC
min;
IL
= 0mA;
IH
min;
min; Vin = V
min;
= 0mA
= t
PARAMETER
max for DQ, DQS and DM
min; One Bank Active-Precharge;
RFC
.
min
CK
;
external clock on; t
= t
IH
REF
IH
min;
CK
IH
min;
min; I
for DQ, DQS and DM
min; t
IH
- 25 -
OUT
CK
min or < V
= t
= 0 mA; Address
CK
CK
min;
= t
IL
CK
max;
min
Publication Release Date: May 26, 2010
-4
140
135
210
75
90
25
25
20
20
35
70
5
2
MAX.
-5/-5I
120
115
175
W9425G6JH
65
80
20
20
20
20
30
65
5
2
UNIT NOTES
mA
Revision A01
7, 9
7, 9
7
7
7
7
7