IDT71256SA20TPG IDT, Integrated Device Technology Inc, IDT71256SA20TPG Datasheet - Page 2

• Manufacturer Part Number: IDT71256SA20TPG
• Description: IC SRAM 256KBIT 20NS 28DIP
• Manufacturer: IDT, Integrated Device Technology Inc

Specifications of IDT71256SA20TPG

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 256K (32K x 8)
• Speed: 20ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 28-DIP (0.300", 7.62mm)
• Density: 256Kb
• Access Time (max): 20ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 5V
• Address Bus: 15b
• Package Type: PDIP
• Operating Temp Range: 0C to 70C
• Number Of Ports: 1
• Supply Current: 145mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Commercial
• Mounting: Through Hole
• Pin Count: 28
• Word Size: 8b
• Number Of Words: 32K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 71256SA20TPG; 800-1430; 800-1430-5; 800-1430

Pin Configurations
Recommended Operating
Temperature and Supply Voltage
Commercial
Industrial
IDT71256SA
CMOS Static RAM 256K (32K x 8-Bit)
V
A
A
A
A
WE
OE
CC
A
A
A
A
A
A
A
11
13
14
12
9
8
7
6
5
4
3
Grade
22
23
24
25
26
27
28
1
2
3
4
5
6
7
GND
I/O
I/O
I/O
A
A
A
A
A
A
A
A
A
A
14
12
7
6
5
4
3
2
1
0
0
1
2
-40
Temperature
0
10
11
12
13
14
O
1
2
3
4
5
6
7
8
9
Top View
Top View
C to +70
O
DIP/SOJ
C to +85
SO28-5
TSOP
P28-2
P28-1
SO28-8
O
C
O
C
28
27
26
25
24
23
22
21
20
19
18
17
16
15
2948 drw 02
GND
0V
0V
V
WE
A
A
A
A
OE
A
CS
I/O
I/O
I/O
I/O
I/O
CC
13
8
9
11
10
7
6
5
4
3
,
4.5V ± 5.5V
4.5V ± 5.5V
2948 drw 02a
21
20
19
18
17
16
15
14
13
12
11
10
9
8
Vcc
A
CS
I/O
I/O
I/O
I/O
I/O
GND
I/O
I/O
I/O
A
A
A
2948 tbl 01
10
0
1
2
7
6
5
4
3
2
1
0
,
2
Absolute Maximum Ratings
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
Recommended DC Operating
Conditions
Truth Table
NOTE:
1. V
NOTES:
1. H = V
2. V
3. Other inputs ≥V
P
I
V
V
T
T
OUT
BIAS
STG
Symbol
T
CC
TERM
V
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
GND
Symbol
CS
V
HC
IL
V
V
H
L
L
L
LC
CC
IH
IL
(3)
(min.) = –1.5V for pulse width less than 10ns, once per cycle.
= 0.2V, V
IH
, L = V
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
OE
X
H
X
X
L
Supply Voltage
Relative to GND
Relative to GND
Storage Temperature
Power Dissipation
DC Output Current
Terminal Voltage
Temperature Under Bias
HC
IL
Commercial and Industrial Temperature Ranges
, x = Don't care.
HC
= V
Parameter
or ≤ V
CC
WE
H
H
X
X
L
(1,2)
–0.2V.
LC
Rating
.
DATA
DATA
High-Z
High-Z
High-Z
I/O
OUT
IN
-0.5
Min.
4.5
2.2
0
Read Data
Outputs Disabled
Deselecte d - Standby (I
Deselecte d - Standby (I
Write Data
(1)
-0.5 to V
-0.5 to +7.0
-55 to +125
-55 to +125
Typ.
5.0
____
____
0
Value
1.0
50
Function
CC
(1)
V
+0.5
CC
Max.
5.5
0.8
0
+0.5
2948 tbl 03
2948 tbl 02
2948 tbl 04
Unit
mA
SB
SB1
o
o
W
V
V
Unit
C
C
V
V
V
V
)
)