BSP123L6327XT Infineon, BSP123L6327XT Datasheet - Page 3

• Manufacturer Part Number: BSP123L6327XT
• Description: Semiconductors and Actives, mosfet, Transistors, pin, mos, signal, MOSFETs, sot, small, trans, Discretes (diodes, tra...
• Manufacturer: Infineon

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsedI
Inverse diode forward voltage V
Reverse recovery time
Reverse recovery charge
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Symbol
g
C
C
t
t
t
t
I
t
Q
j
Q
Q
Q
V
d(on)
r
d(off)
f
S
SM
rr
= 25 °C, unless otherwise specified
fs
SD
(plateau) V
iss
oss
rss
rr
gs
gd
g
V
I
V
f=1MHz
V
I
T
V
V
di
V
V
V
D
D
Page 3
A
Rev. 1.3
DS
GS
DD
GS
R
DD
DD
GS
DD
F
=0.3A
=0.37A, R
=25°C
=50V, I
/dt=100A/µs
=0, V
=50V, V
=0, I
=80V, I
=80V, I
=0 to 10V
=80V, I
2*I
Conditions
D
F
*R
DS
F =
= I
D
D
D
DS(on)max
G
GS
l
=25V,
S
=0.37A
=0.37A,
S
=6
= 0.37 A
,
=10V,
,
min.
0.13
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.27
52.7
17.8
typ.
0.09
3.61
3.5
3.3
3.2
8.7
9.4
0.9
0.8
1.6
56
9
-
-
2007-02-08
max.
11.3
0.37 A
1.48
0.13 nC
4.4
4.8
1.2
70
13
14
79
27
1.2
2.4
BSP123
5
-
-
Unit
S
pF
ns
V
ns
nC
V