BSP123L6327XT Infineon, BSP123L6327XT Datasheet
BSP123L6327XT
Related parts for BSP123L6327XT
BSP123L6327XT Summary of contents
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SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level dv/dt rated • Pb-free lead plating; RoHS compliant Type Package PG-SOT223 BSP123 PG-SOT223 BSP123 Maximum Ratings Parameter Continuous drain current T =25° =70°C A Pulsed drain current ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage V =0, I ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance C Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total ...
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Power dissipation tot A BSP123 1.9 W 1.6 1.4 1.2 1 0.8 0.6 0.4 0 Safe operating area parameter ...
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Typ. output characteristic parameter ° 0.7 10V A 5V 4.5V 0.6 4.1V 3.9V 0.55 3.7V 0.5 3.5V 3.1V 0.45 2.9V 0.4 2.3V 0.35 0.3 0.25 0.2 ...
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Drain-source on-state resistance DS(on) j parameter : BSP123 98 typ 2 0 -60 - Typ. ...
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Typ. gate charge parameter 0.37 A pulsed BSP123 0 max 0 max 6 0 max 4 ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...