ACE9435B ACE [ACE Technology Co., LTD.], ACE9435B Datasheet - Page 2

• Manufacturer Part Number: ACE9435B
• Description: P-Channel Enhancement Mode Field Effect Transistor
• Manufacturer: ACE [ACE Technology Co., LTD.]

Ordering information
Electrical Characteristics
T
Note: 1. The value of P
A
=25
Drain-Source On-State Resistance
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
ACE9435B XX + H
Reverse Transfer Capacitance
2. Repetitive rating, pulse width limited by junction temperature.
Forward Transconductance
O
C unless otherwise noted
Gate Threshold Voltage
T
on the DC thermal resistance rating.
Diode Forward Voltage
Gate Leakage Current
A
Turn-On Delay Time
Turn-Off Delay Time
Output Capacitance
=25°C. The value in any given application depends on the user's specific board design. The current rating is based
Input Capacitance
Parameter
D
is measured with the device mounted on 1in
Drain-source diode characteristics and maximum ratings
FM : SOP-8
Halogen - free
Pb - free
Symbol
V
R
P-Channel Enhancement Mode Field Effect Transistor
Dynamic Characteristics
V
T
(BR)DSS
t
C
I
I
DS(ON)
C
V
C
g
GS(th)
d(off)
GSS
DSS
d(on)
FS
oss
SD
rss
Off characteristics
On characteristics
iss
Switching
V
R
V
V
V
V
V
V
V
DS
GEN
GS
GS
V
GS
DS
DS
DS
V
GS
=V
DS
GS
Conditions
=0V, I
=-10V, I
=±20V, V
=-15V,R
=-24V, V
=-15V, V
=-4.5V, I
=3Ω, V
2
=-5V, I
=0V, I
FR-4 board with 2oz. Copper, in a still air environment with
f=1MHz
GS
, I
D
D
=-250uA
=-250uA
S
D
GS
D
L
=-1A
=-4.6A
GS
D
GS
=-6A
=2.5Ω
DS
=-10V
=-2A
=0V
=0V
=0V
Min.
-30
-1
-1.46
-0.81
Typ.
0.02
±1.5
28.2
550
-36
8.6
51
68
12
60
50
ACE9435B
Max.
±100
VER 1.2
60
82
-1
-3
Unit
mΩ
uA
nA
pF
ns
V
V
S
V
2