SI8472DB VISHAY [Vishay Siliconix], SI8472DB Datasheet

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SI8472DB

Manufacturer Part Number
SI8472DB
Description
N-Channel 20-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
SI8472DB-T2-E1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 10 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 10 s.
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
e. Based on T
Document Number: 63300
S11-1387-Rev. A, 11-Jul-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Ordering Information: Si8472DB-T2-E1 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Package Reflow Conditions
V
DS
20
(V)
Device Marking: 8472
Bump Side View
S
S
A
2
3
= 25 °C.
0.044 at V
0.050 at V
0.056 at V
0.070 at V
R
G
D
MICRO FOOT
DS(on)
xxx = Date/Lot Traceability Code
1
4
GS
GS
GS
GS
c
()
J
= 4.5 V
= 2.5 V
= 1.8 V
= 1.5 V
= 150 °C)
Backside View
N-Channel 20-V (D-S) MOSFET
I
D
(A)
4.5
4.2
4.0
1.5
This document is subject to change without notice.
a, e
A
Q
= 25 °C, unless otherwise noted)
IR/Convection
6.8 nC
g
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
A
A
A
A
A
A
A
A
A
VPR
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
• Baseband Switch
• DC/DC Conversion
• Smart Phones, Portable Media Players
Symbol
T
J
Definition
- Boost Converters
V
V
I
P
, T
DM
I
I
DS
GS
D
S
D
stg
®
Power MOSFET
G
N-Channel MOSFET
- 55 to 150
Limit
0.65
0.78
4.5
3.6
3.3
2.6
1.5
1.8
1.1
0.5
260
260
± 8
20
20
a
a
b
b
a
a
a
b
b
b
D
S
Vishay Siliconix
www.vishay.com/doc?91000
Si8472DB
www.vishay.com
Unit
°C
W
A
V
1

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SI8472DB Summary of contents

Page 1

... Device Marking: 8472 xxx = Date/Lot Traceability Code Ordering Information: Si8472DB-T2-E1 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Maximum Power Dissipation ...

Page 2

... Si8472DB Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient c, d Maximum Junction-to-Ambient Notes: a. Surface mounted on 1" x 1" FR4 board with full copper. b. Maximum under steady state conditions is 100 °C/W. c. Surface mounted on 1" x 1" FR4 board with minimum copper. ...

Page 3

... Test Conditions ° 1 1.5 A, dI/dt = 100 A/µ ° This document is subject to change without notice. Si8472DB Vishay Siliconix Min. Typ. Max. Unit 1 0.7 1 www.vishay.com 3 www.vishay.com/doc?91000 ...

Page 4

... Si8472DB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted thru 0.0 0.5 1.0 1 Drain-to-Source Voltage (V) DS Output Characteristics 0. 1 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage ...

Page 5

... A DC BVDSS Limited 0 Drain-to-Source Voltage ( > minimum V at which R is specified GS GS DS(on) Safe Operating Area, Junction-to-Ambient This document is subject to change without notice. Si8472DB Vishay Siliconix 125 ° ° Gate-to-Source Voltage ( ...

Page 6

... Si8472DB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted 100 T - Case Temperature (°C) A Current Derating* Note: When Mounted on 1" x 1" FR4 with Full Copper. * The power dissipation P is based J(max) dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 7

... THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH Square Wave Pulse Duration ( Square Wave Pulse Duration (s) This document is subject to change without notice. Si8472DB Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 100 ° ...

Page 8

... Si8472DB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT mm: 4-BUMP ( 0.5 mm PITCH Recommended Land 8472 Mark on Backside of Die Notes (Unless otherwise specified): 1. All dimensions are in millimeters. 2. Four (4) solder bumps are lead (Pb)-free 95.5Sn/3.8Ag/0.7Cu with diameter 0. 0.32 mm. ...

Page 9

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

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