LP1500P100 FILTRONIC [Filtronic Compound Semiconductors], LP1500P100 Datasheet
LP1500P100
Manufacturer Part Number
LP1500P100
Description
PACKAGED 1W POWER PHEMT
Manufacturer
FILTRONIC [Filtronic Compound Semiconductors]
Datasheet
1.LP1500P100.pdf
(3 pages)
Phone: (408) 988-1845
Fax: (408) 970-9950
FEATURES
DESCRIPTION AND APPLICATIONS
The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide
(AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a
0.25 m x 1500 m Schottky barrier gate, defined by electron-beam photolithography. The recessed
“mushroom” gate structure minimizes parasitic gate-source and gate resistance.
structure and processing have been optimized for reliable high-power applications. The LP1500 also
features Si3N4 passivation and is available in die form or in other packages.
The LP1500P100 is designed for medium-power, linear amplification. This device is suitable for
applications in commercial and military environments, and it is appropriate to be used as a medium
power transistor in SATCOM uplink transmitters, medium-haul digital radio transmitters, PCS high
efficiency amplifiers, and WLL systems.
ELECTRICAL SPECIFICATIONS @ T
frequency=15 GHz
Output Third-Order Intercept Point
Power Gain at 1-dB Compression
Maximum Drain-Source Current
Saturated Drain-Source Current
Gate-Source Leakage Current
31 dBm Output Power at 1-dB Compression at 15 GHz
9 dB Power Gain at 15 GHz
42 dBm Output IP3 at 15GHz
60% Power-Added Efficiency
Power at 1-dB Compression
Power-Added Efficiency
Gate-Source Breakdown
Gate-Drain Breakdown
Voltage Magnitude
Voltage Magnitude
Pinch-Off Voltage
Transconductance
Parameter
Symbol
|V
|V
G-1dB
P-1dB
I
PAE
I
I
IP3
MAX
BDGD
G
GSO
BDGS
DSS
V
M
P
|
|
http:// www.filss.com
V
V
V
V
DS
DS
DS
DS
Ambient
V
V
V
V
DS
DS
DS
DS
= 8 V; I
= 8 V; I
= 8 V; I
= 8V; I
Test Conditions
P
P
= 2 V; I
= 2 V; V
= 2 V; V
= 2 V; V
I
IN
IN
V
I
GD
GS
GS
= 17 dBm
= 10 dBm
= 25° ° C
= 8 mA
DS
= 8 mA
DS
= -5 V
DS
DS
DS
= 50% I
= 50% I
= 50% I
= 50% I
GS
GS
GS
= 5 mA
= 0 V
= 1 V
= 0 V
DSS
DSS
DSS
DSS
P
ACKAGED
;
;
-0.25
LP1500P100
Min
29.5
375
300
-12
-12
8
1W P
Revised: 1/20/01
Email: sales@filss.com
Typ
490
925
400
-1.2
-15
-16
31
60
42
10
9
OWER
The epitaxial
Max
600
100
-2.0
PHEMT
Units
dBm
dBm
mA
mA
mS
dB
%
V
V
V
A
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LP1500P100 Summary of contents
Page 1
... The LP1500 also features Si3N4 passivation and is available in die form or in other packages. The LP1500P100 is designed for medium-power, linear amplification. This device is suitable for applications in commercial and military environments, and it is appropriate to be used as a medium power transistor in SATCOM uplink transmitters, medium-haul digital radio transmitters, PCS high efficiency amplifiers, and WLL systems ...
Page 2
... TOT DC IN OUT Bias Power Input Power Output Power OUT P = 3.0W – (0.020W TOT HS where T = heatsink or ambient temperature. HS http:// www.filss.com LP1500P100 ACKAGED OWER Min Max 12 -4 2xI DSS 15 700 175 — -65 175 3.0 Revised: 1/20/01 Email: sales@filss.com PHEMT Units ...
Page 3
... PACKAGE OUTLINE (dimensions in mils) All information and specifications are subject to change without notice. Phone: (408) 988-1845 Fax: (408) 970-9950 P ACKAGED http:// www.filss.com LP1500P100 1W P PHEMT OWER Revised: 1/20/01 Email: sales@filss.com ...