FMS2013-000-EB FILTRONIC [Filtronic Compound Semiconductors], FMS2013-000-EB Datasheet

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FMS2013-000-EB

Manufacturer Part Number
FMS2013-000-EB
Description
SPDT GaAs High Isolation Absorptive Switch DC-4 GHz
Manufacturer
FILTRONIC [Filtronic Compound Semiconductors]
Datasheet
Features:
♦ Available as RF Known Good Die
♦ Excellent low control voltage performance
♦ Excellent harmonic performance
♦ Very high isolation >49dB typ. up to 4GHz
♦ Very low Tx Insertion loss <1.0 dB at 4GHz
Description and Applications:
The FMS2013 is a low loss, high power, linear single-pole double-throw Gallium Arsenide switch
designed for general purpose applications over the frequency range DC-4GHz. The die is fabricated
using the Filtronic FL05 0.5µm switch process technology which offers market leading performance
optimised for switch applications.
Electrical Specifications:
Note: External DC blocking capacitors are required on all RF ports (typ: 47pF).
SPDT GaAs High Isolation Absorptive Switch DC-4 GHz
2nd Harmonic Level
Isolation at 4 GHz
Tx Insertion Loss
Rx Insertion Loss
Parameter
VSWR On State
VSWR Off State
Switching speed
Return Loss
Contact Details (UK):
Contact Details (USA): Tel: +1 (408) 850 5790
Preliminary specifications subject to change without notice
Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
(T
Filtronic Compound Semiconductors Ltd
OP
= 25°C,V
Preliminary Data Sheet
3GHz, Pin = 21dBm, Vctrl = 3V
3GHz, Pin = 27dBm, Vctrl = 5V
Pin = 21dBm, 10% to 90% RF
Test Conditions
Website: www.filcs.com
ctrl
4GHz
4GHz
4GHz
4GHz
4GHz
4GHz
= 0V/2.5V, Z
1
Fax: +1 (408) 850 5766
IN
= Z
OUT
2.1
= 50Ω)
RFIN
RFIN
V2
V2
V1
V1
Functional Schematic
Min
Email:
sales@filss.com
Typ
1:1.3
1:1.4
-72
-68
1.0
1.0
15
49
30
Max
FMS2013
RF01
RF01
RF02
RF02
Units
dBc
dBc
dB
dB
dB
dB
ns

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FMS2013-000-EB Summary of contents

Page 1

... Very low Tx Insertion loss <1 4GHz Description and Applications: The FMS2013 is a low loss, high power, linear single-pole double-throw Gallium Arsenide switch designed for general purpose applications over the frequency range DC-4GHz. The die is fabricated using the Filtronic FL05 0.5µm switch process technology which offers market leading performance optimised for switch applications ...

Page 2

... C1 E RFO1 RFO2 Min. Bond Pad (µm) Pitch (µm) 150 141 2 Fax: +1 (408) 850 5766 Website: www.filcs.com FMS2013 RFIN-RF02 Off On Pin Coordinates (µm) GND1 159 , 286 RFIN 159 , 446 Vctrl1 159 , 606 Vctrl2 159 , 766 RFO1 757 , 857 GND2 ...

Page 3

... Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 2.1 Preliminary Data Sheet -20 -30 Isolation (dB) -40 -50 -60 - Frequency (GHz) Isolation vs. Frequency -0.8 -1 -1.2 -1.4 3V -1.6 -1 Input Power (dBm) 6 Insertion Loss vs. Power 3 Fax: +1 (408) 850 5766 Website: www.filcs.com FMS2013 Email: sales@filss.com ...

Page 4

... Preliminary Data Sheet Label Component C1, C2 Capacitor, 470pF, 0603 C3, C4, C5 Capacitor, 100pF, 0202 C6, C7 Capacitor, 47pF, 0402 0 -0.2 -0.4 -0.6 Loss (dB) -0 Frequency (GHz) Insertion Loss vs. Frequency Isolation (dB Frequency (GHz) Isolation vs. Frequency 4 Fax: +1 (408) 850 5766 Website: www.filcs.com FMS2013 Email: sales@filss.com ...

Page 5

... Ordering Information: Part Number FMS2013-000-WP FMS2013-000-GP FMS2013-000-EB FMS2013-000-FF Preferred Assembly Instructions: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is not metallised and the recommended mounting method is by the use of conductive epoxy ...

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