K4M56323PG-FHE/G90 SAMSUNG [Samsung semiconductor], K4M56323PG-FHE/G90 Datasheet - Page 5

• Manufacturer Part Number: K4M56323PG-FHE/G90
• Description: 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
• Manufacturer: SAMSUNG [Samsung semiconductor]

DC CHARACTERISTICS
K4M56323PG-F(H)E/G/C/F
Recommended operating conditions (Voltage referenced to V
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Internal TCSR can be supported.
4. It has +/-5 °C tolerance.
5. K4M56323PG-F(H)E/C
6. K4M56323PG-F(H)G/F
7. DPD(Deep Power Down) function is an optional feature, and it will be enabled upon request.
8. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Operating Current
(One Bank Active)
Precharge Standby Current in
power-down mode
Precharge Standby Current
in non power-down mode
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
Deep Power Down Current
In comercial Temp : 45°C/Max 70°C. In extended Temp : 45°C/Max 85°C.
Please contact Samsung for more information.
Parameter
**
**
Symbol
I
I
I
I
CC2
I
CC2
CC3
I
CC3
I
I
CC2
CC2
CC3
CC3
I
I
I
I
I
CC
CC
CC
CC
CC1
NS
NS
PS CKE & CLK ≤ V
PS CKE & CLK ≤ V
4
5
6
8
N
N
P
P
CKE ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
CKE ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
t
CKE ≤ 0.2V
t
I
Page burst
4Banks Activated
t
ARFC
CKE ≤ 0.2V
Burst length = 1
I
RC
O
CCD
O
= 0 mA
= 0 mA
≥ t
= 2CLKs
≥ t
RC
ARFC
IL
IH
IH
IL
IH
IH
(min)
(max), t
(max), t
(min), CS ≥ V
(min), CLK ≤ V
(min), CS ≥ V
(min), CLK ≤ V
(min)
IL
IL
Test Condition
(max), t
(max), t
CC
CC
SS
= 10ns
= 10ns
= 0V, T
IH
IH
CC
CC
IL
IL
(min), t
(min), t
(max), t
(max), t
= ∞
= ∞
A
-E/C
-G/F
Internal TCSR
= -25 to 85°C for Extended, -25 to 70°C for Commercial)
CC
CC
CC
CC
= 10ns
= 10ns
= ∞
= ∞
Full Array
Full Array
1/2 Array
1/4 Array
1/2 Array
1/4 Array
140
-75
65
80
45
200
160
140
150
135
130
*4
Version
Mobile-SDRAM
140
-90
0.3
0.3
65
10
25
15
70
10
1
5
2
85/70
450
300
250
300
250
225
140
-1L
65
70
January 2006
Unit
mA
mA
mA
mA
mA
mA
mA
mA
°C
uA
uA
Note
1
1
2
3
5
6
7