K4M56323PG-FHE/G90 SAMSUNG [Samsung semiconductor], K4M56323PG-FHE/G90 Datasheet - Page 4

• Manufacturer Part Number: K4M56323PG-FHE/G90
• Description: 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4M56323PG-F(H)E/G/C/F
ABSOLUTE MAXIMUM RATINGS
NOTES:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
NOTES :
1. Under all conditions VDDQ must be less than or equal to VDD.
2. VIH (max) = 2.2V AC.The overshoot voltage duration is ≤ 3ns.
3. VIL (min) = -1.0V AC. The undershoot voltage duration is ≤ 3ns.
4. Any input 0V ≤ VIN ≤ VDDQ.
5. Dout is disabled, 0V ≤ VOUT ≤ VDDQ.
CAPACITANCE
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Clock
RAS, CAS, WE, CS, CKE
DQM
Address
DQ
Voltage on any pin relative to V
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.
0
~ DQ
Parameter
31
Parameter
DD
supply relative to V
Pin
(V
DD
= 1.8V, T
ss
ss
A
Symbol
= 23°C, f = 1MHz, V
V
V
V
V
V
V
DDQ
I
OH
DD
OL
LI
IH
IL
Symbol
0.8 x V
C
C
C
V
C
C
ADD
OUT
CLK
DDQ
IN
IN
Min
-0.3
1.7
1.7
-2
-
REF
-0.2
DDQ
SS
V
V
=0.9V ± 50 mV)
Symbol
DD
= 0V, T
IN
T
, V
I
P
, V
STG
OS
D
OUT
DDQ
Min
A
1.5
1.5
1.5
1.5
2.0
Typ
1.8
1.8
= -25 to 85°C for Extended, -25 to 70°C for Commercial)
0
-
-
-
-
V
DDQ
Max
1.95
1.95
0.3
0.2
Max
3.5
3.0
3.0
3.0
4.5
2
-
+ 0.3
-55 ~ +150
-1.0 ~ 2.6
-1.0 ~ 2.6
Value
1.0
50
Mobile-SDRAM
Unit
uA
V
V
V
V
V
V
Unit
pF
pF
pF
pF
pF
I
OH
I
OL
January 2006
Unit
= -0.1mA
Note
= 0.1mA
mA
°C
W
V
V
Note
1
1
2
3
4