HB28D096C6 HITACHI [Hitachi Semiconductor], HB28D096C6 Datasheet - Page 53

• Manufacturer Part Number: HB28D096C6
• Manufacturer: HITACHI [Hitachi Semiconductor]

DC Characteristics-3 (Ta = 0 to +60˚C, V
Parameter
Sleep/standby
current
Sector read current I
Sector write current I
Symbol
I
I
I
SP1
CCR
CCR
CCW
CCW
(DC)
(Peak) 50
(DC)
(Peak) 50
32MB/96MB
Typ
0.3
25
25
Max
1.0
50
80
50
100
CC
= 3.3 V ± 5%)
Unit Test conditions
mA
mA
mA
mA
mA
CMOS level (control signal = V
(In Memory card mode and I/O card
mode)
CMOS level (control signal = V
during sector read transfer
CMOS level (control signal = V
during sector write transfer
HB28D096/032C6
CC
CC
CC
– 0.2 V)
– 0.2 V)
– 0.2 V)
53