HB28D096C6 HITACHI [Hitachi Semiconductor], HB28D096C6 Datasheet - Page 52

• Manufacturer Part Number: HB28D096C6
• Manufacturer: HITACHI [Hitachi Semiconductor]

HB28D096/032C6
DC Characteristics-1 (Ta = 0 to +60˚C, V
Parameter
Input leakage current
Output voltage
Note:
Parameter
Input voltage
(CMOS)
Input voltage
(Schmitt trigger)
DC Characteristics-2 (Ta = 0 to +60˚C, V
Parameter
Sleep/standby
current
Sector read current I
Sector write current I
52
1.
Symbol Min
V
V
V
V
Except pulled up input pin.
IL
IH
IL
IH
Symbol
I
I
I
SP1
CCR
CCR
CCW
CCW
(DC)
(Peak) 80
(DC)
(Peak) 80
Symbol
I
V
V
LI
3.3 V
—
2.4
—
—
OL
OH
32MB/96MB
Typ
0.5
40
45
Min
—
—
V
Typ
—
—
1.0
1.8
CC
– 0.8 —
Max
0.6
—
—
—
Typ
—
—
Max
1.0
75
120
75
120
CC
CC
= 5 V ± 10%, 3.3 V ± 5%)
= 5.0 V ± 10%)
5 V
Min
—
0.4
—
—
Max
± 1
0.4
—
Unit Test conditions
mA
mA
mA
mA
mA
Typ
—
—
2.0
2.8
CMOS level (control signal = V
(In Memory card mode and I/O card
mode)
CMOS level (control signal = V
during sector read transfer
CMOS level (control signal = V
during sector write transfer
Unit
µA
V
V
Test conditions
Vin = GND to V
I
I
OL
OH
Max
0.8
—
—
—
= 8 mA
= –8 mA
Unit Test conditions
V
V
V
V
CC
CC
CC
CC
– 0.2 V)
– 0.2 V)
– 0.2 V)
Note
1