K4D263238A-GC36 SAMSUNG [Samsung semiconductor], K4D263238A-GC36 Datasheet - Page 15

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K4D263238A-GC36

Manufacturer Part Number
K4D263238A-GC36
Description
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
K4D263238A-GC
AC CHARACTERISTICS (II)
AC CHARACTERISTICS (I)
Note : 1. For normal write operation, even numbers of Din are to be written inside DRAM
K4D263238A-GC33
K4D263238A-GC36
Row cycle time
Refresh row cycle time
Row active time
RAS to CAS delay for Read
RAS to CAS delay for Write
Row precharge time
Row active to Row active
Last data in to Row precharge
@Normal Precharge
Last data in to Row precharge
@Auto Precharge
Last data in to Read command
Col. address to Col. address
Mode register set cycle time
Auto precharge write recovery
+ Precharge
Exit self refresh to read com-
Power down exit time
Refresh interval time
300MHz ( 3.3ns )
275MHz ( 3.6ns )
250MHz ( 4.0ns )
222MHz ( 4.5ns )
200MHz ( 5.0ns )
275MHz ( 3.6ns )
250MHz ( 4.0ns )
222MHz ( 4.5ns )
200MHz ( 5.0ns )
Frequency
Frequency
Parameter
Cas Latency
Cas Latency
5
5
4
4
3
5
4
4
3
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Sym-
RC
RFC
RAS
RCDR
RCDW
RP
RRD
WR
WR_A
CDLR
CCD
MRD
DAL
XSR
PDEX
REF
bol
1tCK+tIS
Min
200
7.8
tRC
tRC
17
19
12
17
16
15
13
12
16
15
13
12
6
4
5
3
3
3
2
1
2
8
-33
100K
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
tRFC
tRFC
19
18
17
15
14
18
17
15
14
1tCK+tIS
Min
200
7.8
16
18
11
5
3
5
3
3
3
2
1
2
8
-36
tRAS
tRAS
12
10
10
11
11
9
8
9
8
- 15 -
100K
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
tRCDRD tRCDWR
tRCDRD tRCDWR
1tCK+tIS
Min
200
7.8
6
5
5
4
4
5
5
4
4
15
17
10
5
3
5
3
3
3
2
1
2
8
-40
100K
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4
3
3
2
2
3
3
2
2
1tCK+tIS
Min
200
7.8
13
15
9
2
4
4
2
3
3
2
1
2
7
-45
tRP
tRP
5
5
5
4
4
5
5
4
4
128M DDR SDRAM
100K
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
tRRD
tRRD
1tCK+tIS
Rev. 2.0 (Jan. 2003)
3
3
3
2
2
3
3
2
2
Min
200
7.8
12
14
8
4
2
4
2
2
3
2
1
2
7
-50
(Unit : Number of Clock)
100K
Max
tDAL
tDAL
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8
8
8
7
7
8
8
7
7
Unit Note
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ns
us
Unit
tCK
tCK
tCK
tCK
tCK
Unit
tCK
tCK
tCK
tCK
1
1
1

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