RU82566DC INTEL [Intel Corporation], RU82566DC Datasheet - Page 21

• Manufacturer Part Number: RU82566DC
• Description: 82566 Gigabit Platform LAN Connect
• Manufacturer: INTEL [Intel Corporation]

3.5.2.6
3.5.3
Table 20. PNP Specification for 1.0V DC LVR
Table 21. Crystal Specifications (Sheet 1 of 2)
PNP Transistor Specification for 1.0V DC LVR
a. Vce = -1.0 V DC; Ic = 0.5 A; T = 25
b. The thermal resistance feature depends on the PNP package along with the board layout including: number of layers, layer
c. Ta = 70
Crystal
Table 21
1.0V DC LVR
Transistor for
Connection
Pullability from Nominal
Temperature Tolerance
Operating Temperature
Insulation Resistance
thickness, copper area for collector pad, and component locations.
Operating/Calibration
Frequency Tolerance
Shunt Capacitance
Parameter Name
Resistance (ESR)
Load Capacitance
Load Capacitance
Equivalent Series
PNP
PNP
Max Drive Level
Vibration mode
Non Operating
Temperature
Frequency
lists the recommended crystal specifications for operation with the 82566.
°
Aging
Mode
C; Vin = 3.6 V DC; Vout = 0.95 V DC; I = 0.4 A
Cut
Thermal Resistance Junction to
82566 Gigabit Platform LAN Connect Networking Silicon Datasheet
Maximum Operation Junction
Maximum Power Dissipation
Maximum Collector Current
Transition Frequency
∆f/f
Description
Temperature
Symbol
Ambient
∆f/C
dc Gain
o
C
∆f/f
∆f/f
°
T
T
C
D
@25°C
R
IR
C.
f
load
opr
opr
-
-
-
o
s
o
L
load
o
o
a
b
Recommended Value
20 pF (max 24 pF)
±5 ppm per year
c
15 ppm/pF max
-20 to +70 °C
-40 to +90 °C
Fundamental
25.000 MHz
500 MΩ min
±30 ppm
±30 ppm
500 µW
Parallel
10 Ω
6 pF
AT
Symbol
Tj_max
Ic_max
Pmax
Rt_ja
fT
β
Max/Min Range
±5 ppm per year
Min
60
-
-
-
-
-
50 Ω
a
a
a
a
a
-
-
-
-
-
-
-
Typ
40
-
-
-
-
-
Max
400
150
1.1
@ 100V DC
60
Conditions
1
@25 MHz
-
@25 °C
@25 °C
-
-
-
-
-
-
-
-
-
-
-
Units
°C/W
MHz
°C
W
A
-
17