M36P0R9060N0ZANE NUMONYX [Numonyx B.V], M36P0R9060N0ZANE Datasheet - Page 14

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M36P0R9060N0ZANE

Manufacturer Part Number
M36P0R9060N0ZANE
Description
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Mux I/O, Multi-Chip Package
Manufacturer
NUMONYX [Numonyx B.V]
Datasheet
3 Functional description
3
14/23
Functional description
The PSRAM and Flash memory components have separate power supplies but share the
same grounds. They are distinguished by two Chip Enable inputs: E
and E
Recommended operating conditions do not allow more than one device to be active at a
time. The most common example is a simultaneous read operations on the Flash memory
and the PSRAM which would result in a data bus contention. Therefore it is recommended
to put the other device in the high impedance state when reading the selected device.
Figure 3.
A16-A21
A22-A24
P
for the PSRAM.
Functional block diagram
L
K
WP
G
W
E
RP
F
E
G
W
CR
UB
LB
F
F
P
F
P
F
P
P
P
P
V
V
DDF
CCP
512 Mbit
Memory
PSRAM
64 Mbit
Flash
V
PPF
V
SS
DPD
V
DDQ
F
WAIT
F
for the Flash memory
M36P0R9060N0
ADQ0-ADQ15
Ai13419

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