RN1965 TOSHIBA Semiconductor CORPORATION, RN1965 Datasheet

RN1965

Manufacturer Part Number

RN1965

Description

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheets

1.RN1962.pdf (7 pages)

2.RN1962.pdf (7 pages)

3.RN1962.pdf (7 pages)

Specifications of RN1965

Date_code

04+

Packing_info

SOT-363

Current page: 1 of 7
Download datasheet (266Kb)

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l Including two devices in US6 (ultra super mini type 6 leads)

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

Equivalent Circuit and Bias Resistor Values

Maximum Ratings

· Complementary to RN2961~RN2966

*: Total rating

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

Characteristic

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

(Ta = 25° ° ° ° C) (Q1, Q2 Common)

RN1961~1966

RN1961~1964

RN1965, 1966

RN1961~1966

Type No.

RN1961

RN1962

RN1963

RN1964

RN1965

RN1966

RN1961,RN1962,RN1963

RN1964,RN1965,RN1966

R1 (kΩ)

4.7

2.2

4.7

Symbol

CBO

CEO

EBO

stg

R2 (kΩ)

4.7

−55~150

Rating

100

200

150

Equivalent Circuit

JEDEC

EIAJ

TOSHIBA

Weight: 6.8mg

Unit

°C

RN1961~RN1966

2-2J1B

(Top View)

―

2001-06-07

Unit: mm

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