RN1965 TOSHIBA Semiconductor CORPORATION, RN1965 Datasheet

RN1965

Manufacturer Part Number

RN1965

Description

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheets

1.RN1962.pdf (7 pages)

2.RN1962.pdf (7 pages)

3.RN1962.pdf (7 pages)

Specifications of RN1965

Date_code

04+

Packing_info

SOT-363

Current page: 1 of 7
Download datasheet (262Kb)

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

Equivalent Circuit and Bias Resistor Values

Maximum Ratings

Equivalent Circuit

• Complementary to RN2961~RN2966

Including two devices in US6 (ultra super mini type 6 leads)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

*: Total rating

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

Characteristic

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

(Top View)

(Ta = 25°C) (Q1, Q2 Common)

RN1961~1966

RN1961~1964

RN1965, 1966

RN1961~1966

Type No.

RN1961

RN1962

RN1963

RN1964

RN1965

RN1966

RN1961,RN1962,RN1963

RN1964,RN1965,RN1966

R1 (kΩ)

4.7

2.2

4.7

Symbol

CBO

CEO

EBO

stg

R2 (kΩ)

4.7

−55~150

Rating

100

200

150

JEDEC

JEITA

TOSHIBA

Weight: 6.8mg(typ.)

Unit

°C

RN1961~RN1966

2-2J1B

―

2005-02-22

Unit: mm

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