K4S161622D-TC/L10 Samsung semiconductor, K4S161622D-TC/L10 Datasheet - Page 31

• Manufacturer Part Number: K4S161622D-TC/L10
• Description: 512K x 16Bit x 2 Banks Synchronous DRAM
• Manufacturer: Samsung semiconductor

DQ
CLOCK
K4S161622D
Read & Write Cycle at Different Bank @Burst Length=4
A
ADDR
DQM
10
CKE
RAS
CAS
WE
/AP
CS
BA
CL=2
CL=3
*Note :
0
Row Active
(A-Bank)
RAa
RAa
1
1. t
CDL
2
(A-Bank)
should be met to complete write.
CAa
Read
3
4
QAa0 QAa1 QAa2 QAa3
5
Row Active
(B-Bank)
QAa0 QAa1 QAa2 QAa3
RBb
RBb
6
Precharge
(A-Bank)
7
8
9
HIGH
10
11
(B-Bank)
Write
DBb0
DBb0
CBb
12
Row Active
(A-Bank)
DBb1 DBb2 DBb3
DBb1 DBb2 DBb3
RAc
RAc
13
14
15
tCDL
(A-Bank)
Read
CMOS SDRAM
CAc
16
*Note 1
17
QAc0
18
: Don't care
QAc0
QAc1 QAc2
19
QAc1