HIP0061AS1 Intersil Corporation, HIP0061AS1 Datasheet - Page 4

• Manufacturer Part Number: HIP0061AS1
• Description: 60V/ 3.5A/ 3-Transistor Common Source ESD Protected Power MOSFET Array
• Manufacturer: Intersil Corporation

Typical Performance Curves
FIGURE 5. NORMALIZED r
FIGURE 7. NORMALIZED V
10.0
2.0
1.5
1.0
0.5
7.5
5.0
2.5
2.5
2.0
1.5
1.0
0.5
FIGURE 3. TYPICAL SATURATION CHARACTERISTICS
0
0
-75
0
-75
0
PULSE DURATION = 300 s, V
-25
-25
2
V
DS
T
T
J
J
, JUNCTION TEMPERATURE (
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
DS(ON)
V
V
V
GS(TH)
PULSE DURATION = 300 s, T
25
25
GS
GS
GS
4
= 10V
= 8V
= 6V
vs JUNCTION TEMPERATURE
vs JUNCTION TEMPERATURE
GS
= 10V, I
75
75
6
V
GS
D
(Continued)
= 3.5A
= V
o
o
C)
C)
DS
125
125
8
V
V
, I
GS
GS
D
C
= 250 A
= 25
= 5V
= 4V
o
HIP0061
C
175
175
10
4
FIGURE 6. NORMALIZED BV
20
15
10
1.2
1.1
1.0
0.9
0.8
12
5
0
FIGURE 8. GATE-SOURCE VOLTAGE vs GATE CHARGE
8
4
0
0
FIGURE 4. TYPICAL TRANSFER CHARACTERISTICS
-75
0
V
DS
I
D
= 100 A
= 15V
-25
2
2
V
V
V
V
T
GS
DS
DS
DS
J
, JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
= 50V
= 30V
= 20V
Q, GATE CHARGE (nC)
25
4
4
DSS
-40
vs JUNCTION TEMPERATURE
o
C
75
6
6
25
I
D
o
= 2.0A, T
C
o
125
C)
125
o
8
8
C
C
= 25
o
C
175
10
10