HIP0061AS1 Intersil Corporation, HIP0061AS1 Datasheet - Page 2

• Manufacturer Part Number: HIP0061AS1
• Description: 60V/ 3.5A/ 3-Transistor Common Source ESD Protected Power MOSFET Array
• Manufacturer: Intersil Corporation

Absolute Maximum Ratings
Drain to Source Voltage, V
Drain to Gate Voltage, V
Gate to Source Voltage, V
Pulsed Drain Current, I
Continuous Source to Drain Diode Current, I
Continuous Drain Current, I
Single Pulse Avalanche Energy, E
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -40
Drain to Source On-State Voltage Range . . . . . . . . . . . . 5V to 10V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
Electrical Specifications
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Forward Gate Current, Drain Short
Circuited to Source
Reverse Gate Current, Drain Short
Circuited to Source
Drain to Source On Resistance (Note 5)
Drain to Source On Resistance Matching
Forward Transconductance (Note 5)
Turn-On Delay Time (Note 6)
Rise Time (Note 6)
Turn-Off Delay Time (Note 6)
Fall Time (Note 6)
Total Gate Charge (Note 6)
Gate-Source Charge (Note 6)
Gate-Drain Charge (Note 6)
1. Pulse width limited by maximum junction temperature.
2. Drain current limited by package construction.
3. V
4.
(Over Operating Junction and Case Temperature Range) . . . . 60V
All Outputs on at V
at V
All Outputs on at V
JA
DD
GS
is measured with the component mounted on an evaluation PC board in free air.
= 25V, Start T
= 10V (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5A
PARAMETERS
GS
GS
DM
J
DGR
= 10V (Notes 1, 2) . . . . . . . . . . . . . . . . 10A
= 25
= 10V (Note 2) . . . . . . . . . . . . . . . . . . 3.5A
GS
, Each Output,
DS
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
. . . . . . . . . . . . . . . . . . . . . . .-15, +20V
o
, Each Output,
C, L = 15mH, R
AS
T
(Note 3) . . . . . . . . . . . . 100mJ
C
T
A
= 25
= 25
SD
o
C, Unless Otherwise Specified
GS
SYMBOL
o
V
r
r
Q
BV
t
C
I
DS(ON)
DS(ON)
I
t
d(OFF)
GS(TH)
GSSF
GSSR
d(ON)
I
g(TOT)
Q
Q
DSS
= 50 , I
g
DSS
t
t
gd
fs
gs
r
f
o
C to 125
PEAK
I
V
V
V
V
V
V
V
V
V
V
V
V
V
See Figure 14
V
See Figures 16, 17
D
GS
GS
GS
DS
GS
DS
DS
GS
GS
GS
GS
DS
DD
DS
= 100 A, V
HIP0061
= 10V, I
= 60V
= 0V, V
= 0V, V
= 10V, I
= 50V, V
= V
= 0V
= 10V, I
= 10V, I
= 5V, I
= 5V, I
= 30V, R
= +10V, I
= 3.5A. See Figures 1, 2, 12, and 13.
o
C
DS
2
TEST CONDITIONS
, I
D
D
D
Thermal Information
Thermal Resistance (Typical, Note 4)
Maximum Junction Temperature, T
Maximum Storage Temperature Range, T
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300
Die Characteristics
Back Side Potential . . . . . . . . . . . . . . . . . . . . . . . . . V- (Source, Tab)
GS
GS
D
D
D
D
GS
= 2A
= 2A
GS
L
= 3.5A
D
= 3.5A
= 3.5A
= 1A
SIP-Vertical Package . . . . . . . . . . . . .
SIP-Gullwing Package . . . . . . . . . . . .
= 250 A
= 15 ,
= 20V
= -15V
= 2A, R
= 10V, I
= 0V
G
D
= 50
T
125
T
T
T
T
T
T
T
T
= 2A
C
C
C
C
C
C
C
C
C
= -40
= 25
= 25
= 125
= 25
= 125
= 25
= 125
= 25
o
C
o
o
o
o
o
o
C
C
C
C
C
o
o
o
C to
C
C
C
MIN
1.8
60
J
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
. . . . . . . . . . . . . . . . . . . . 150
STG
0.215
0.365
0.275
0.465
TYP
2.3
2.5
8.0
0.7
3.5
70
95
10
25
18
12
JA
-
-
-
-
-
. . . . -55
(
55
55
o
C/W)
0.265
0.425
0.320
MAX
-100
100
2.7
0.5
9.5
1.0
4.0
10
1
-
-
-
-
-
-
-
-
o
C to 150
JC
UNITS
(
o
3
3
nC
nC
nC
nA
nA
ns
ns
ns
ns
%
C/W)
V
V
V
S
A
A
o
o
o
C
C
C