AT28C17-15 ATMEL Corporation, AT28C17-15 Datasheet

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AT28C17-15

Manufacturer Part Number
AT28C17-15
Description
16K 2K x 8 CMOS E2PROM
Manufacturer
ATMEL Corporation
Datasheet

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Features
Description
The AT28C17 is a low-power, high-performance Electrically Erasable and Program-
mable Read Only Memory with easy to use features. The AT28C17 is a 16K memory
organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable
nonvolatile CMOS technology.
Pin Configurations
Pin Name
A0 - A10
CE
OE
WE
I/O0 - I/O7
RDY/BUSY
NC
DC
Fast Read Access Time - 150 ns
Fast Byte Write - 200 s or 1 ms
Self-Timed Byte Write Cycle
Direct Microprocessor Control
Low Power
High Reliability
5V
CMOS & TTL Compatible Inputs and Outputs
JEDEC Approved Byte Wide Pinout
Commercial and Industrial Temperature Ranges
Internal Address and Data Latches
Internal Control Timer
Automatic Clear Before Write
DATA POLLING
READY/BUSY Open Drain Output
30 mA Active Current
100 a CMOS Standby Current
Endurance: 10
Data Retention: 10 Years
10% Supply
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
Ready/Busy Output
No Connect
Don’t Connect
PDIP, SOIC
Top View
4
or 10
5
Cycles
Note: PLCC package pins 1 and
17 are DON’T CONNECT.
Top View
PLCC
(continued)
AT28C17
AT28C17
16K (2K x 8)
CMOS
E
2
PROM
2-183
0541A

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AT28C17-15 Summary of contents

Page 1

... Commercial and Industrial Temperature Ranges Description The AT28C17 is a low-power, high-performance Electrically Erasable and Program- mable Read Only Memory with easy to use features. The AT28C17 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. ...

Page 2

... Description (Continued) The AT28C17 is accessed like a static RAM for the read or write cycles without the need of external components. During a byte write, the address and data are latched in- ternally, freeing the microprocessor address and data bus for other operations. Following the initiation of a write cy- ...

Page 3

... OE low, CE high or WE high inhibits byte write cycles. CHIP CLEAR: The contents of the entire memory of the AT28C17 may be set to the high state by the CHIP CLEAR operation. By setting CE low and volts, the chip is cleared when a 10 msec low pulse is applied to WE. ...

Page 4

... MHz OUT 2 4.0 for RDY/BUSY I = -400 A OH AT28C17-15 0°C - 70°C -40°C - 85°C 5V 10 OUT High High Z V High Z IL 0.5V. Min Max ...

Page 5

... L ACC 4. This parameter is characterized and is not 100% tested after the falling ACC OE . ACC Output Test Load (1) Typ Max AT28C17 AT28C17-15 Max 150 150 70 50 Units Conditions OUT Units 2-187 ...

Page 6

... Data, OE Hold Time DH OEH and Set-up and Hold Time Time to Device Busy DB t Write Cycle Time WC AC Write Waveforms WE Controlled CE Controlled AT28C17 2-188 Min Typ 10 50 100 AT28C17 0.5 AT28C17E 100 Max Units ns ns 1000 1.0 ms 200 s ...

Page 7

... OE t Write Recovery Time WR Notes: 1. These parameters are characterized and not 100% tested. 2. See AC Read Characteristics. Data Polling Waveforms Chip Erase Waveforms sec (min msec (min 12.0V 0.5V H (1) Min 10 10 (2) 0 AT28C17 Typ Max Units 2-189 ...

Page 8

... AT28C17 2-190 ...

Page 9

... Standard Device: Endurance = 10K Write Cycles; Write Time = High Endurance Option: Endurance = 100K Write Cycles; Write Time = 200 s Ordering Code AT28C17(E)-15JC AT28C17(E)-15PC AT28C17(E)-15SC AT28C17(E)-15JI AT28C17(E)-15PI AT28C17(E)-15SI AT28C17-W Package and Temperature Combinations JC, JI, PC, PI, SC, SI JC, JI, PC, PI, SC Package Type ...

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