DMN66D0LW-7 DIODES [Diodes Incorporated], DMN66D0LW-7 Datasheet - Page 2

• Manufacturer Part Number: DMN66D0LW-7
• Description: N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
• Manufacturer: DIODES [Diodes Incorporated]

DMN66D0LW
Document number: DS31483 Rev. 1 - 2
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
Fig. 5 Gate Threshold Variation vs. Ambient Temperature
Fig. 3 On-Resistance vs. Drain Current & Gate Voltage
0.6
0.5
0.4
0.3
0.2
0.1
-50
0
9
8
7
6
5
4
3
2
1
0
-25
T , AMBIENT TEMPERATURE (°C)
0.1
A
I , DRAIN-SOURCE CURRENT (A)
D
V
GS
V
0
GS
= 5V
= 10V
0.2
25
50
0.3
75
0.4
I = 250µA
D
100
0.5
125 150
0.6
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0.01
100
0.1
10
2.0
1.0
2.5
1.5
0.5
1
1
0
1
0
T = 85°C
A
T = 150°C
5
A
Fig. 2 Typical Transfer Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
V
V
DS
Pulsed
DS
GS
Fig. 6 Typical Total Capacitance
= 5V
, GATE SOURCE VOLTAGE (V)
10
2
T = -55°C
15
A
T = 25°C
A
20
3
25
C
C
C
oss
iss
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DMN66D0LW
30
4
© Diodes Incorporated
35
40
July 2008
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