Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage (Note 1)
Drain Current (Note 1)
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Features
•
•
•
•
•
•
•
•
Notes:
DMN66D0LW
Document number: DS31483 Rev. 1 - 2
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate, 1KV (HBM)
Lead Free/RoHS Compliant (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
2. No purposefully added lead.
3. Short duration pulse test used to minimize self-heating effect.
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
ESD PROTECTED, 1KV
Characteristic
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
@T
Continuous @ 100°C
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
@ T
@ T
@ T
@ T
TOP VIEW
Continuous
Continuous
C
C
J
J
= 25°C
= 125°C
= 25°C
= 125°C
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Pulsed
www.diodes.com
SOT-323
Symbol
R
BV
V
t
t
DS (ON)
D(OFF)
I
C
D(ON)
I
C
1 of 4
GS(th)
C
g
DSS
GSS
oss
FS
DSS
iss
rss
Mechanical Data
Symbol
Symbol
T
•
•
•
•
•
•
•
•
•
J,
V
V
R
P
GSS
DSS
I
T
θ JA
D
Please click here to visit our online spice models database.
Min
D
1.2
Gate
STG
60
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Case: SOT-323
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
EQUIVALENT CIRCUIT
Gate
Protection
Diode
Typ
3.5
3.0
3.4
1.4
70
23
10
33
⎯
⎯
⎯
⎯
Drain
Source
Max
500
1.0
2.0
⎯
±5
⎯
⎯
⎯
⎯
⎯
⎯
6
5
-55 to +150
Unit
mS
µA
μA
pF
pF
pF
ns
ns
Ω
V
V
Value
Value
±20
115
800
200
625
60
73
V
V
V
V
V
V
V
V
V
V
G
GS
DS
GS
DS
GS
GS
DS
DS
DD
GEN
TOP VIEW
= 0V, I
= 60V, V
= ±20V, V
= V
= 5.0V, I
= 10V, I
= 10V, I
= 25V, V
= 30V, I
= 10V
GS
D
, I
Test Condition
D
,
D
D
D
D
= 10μA
D
R
GS
GS
= 250μA
= 0.115A
DS
= 0.115A
= 0.115A, R
GEN
DMN66D0LW
= 0.115A
= 0V
S
= 0V, f = 1.0MHz
= 0V
= 25Ω
© Diodes Incorporated
Units
Units
°C/W
mW
mA
°C
V
V
L
= 150Ω,
July 2008