SSM6E01TU_07 TOSHIBA [Toshiba Semiconductor], SSM6E01TU_07 Datasheet - Page 3

• Manufacturer Part Number: SSM6E01TU_07
• Description: Load Switch Applications
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Q1 Electrical Characteristics
Q2 Electrical Characteristics
Precaution
this product. For normal switching operation, V
voltage than V
V
Please take this into consideration for using the device.
Forward voltage (diode)
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Note 3: Pulse test
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Gate-Source resistance
Note 3: Pulse test
th
can be expressed as voltage between gate and source when low operating current value is I
Characteristics
Characteristics
th
. (Relationship can be established as follows: V
(Ta = 25°C)
(Ta = 25°C)
V
V
R
R
Symbol
Symbol
(BR) DSS
(BR) DSS
DS (ON)
DS (ON)
V
I
I
I
I
R
|Y
|Y
C
C
GSS
DSS
GSS
DSS
V
V
DSF
GS
iss
iss
th
fs
th
fs
|
|
GS (on)
I
V
I
V
V
V
I
I
V
V
I
V
V
V
I
V
V
DR
D
D
D
D
D
GS
DS
DS
DS
DS
GS
DS
DS
DS
DS
GS
requires higher voltage than V
= −1 mA, V
= −0.5 A, V
= −0.5 A, V
= 0.1 mA, V
= 10 mA, V
= 1.0 A, V
3
= −12 V, V
= −3 V, I
= −3 V, I
= −10 V, V
= 20 V, V
= 3 V, I
= 3 V, I
= 3 V, V
= ±10 V, V
= 10 V, V
= 0~10 V
Test Condition
Test Condition
GS (off)
D
D
GS
D
D
GS
GS
GS
GS
GS
GS
= 0.1 mA
= 10 mA
DS
GS
= −0.1 mA
= −0.5 A
GS
GS
DS
= 0, f = 1 MHz
= 0
= −4 V
= −2.5 V
= 2.5 V
= 0 V
= 0
= 0
= 0
= 0
= 0
= 0, f = 1 MHz
< V
th
< V
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
GS (on)
th
)
−0.4
Min
−12
Min
1.3
0.7
0.7
20
25
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
and V
GS (off)
Typ.
Typ.
125
180
310
2.5
1.0
50
11
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
4
SSM6E01TU
D
= ±100 μA for
2007-11-01
requires lower
−1.1
Max
Max
160
240
1.2
1.3
1.3
±1
−1
15
10
⎯
⎯
⎯
⎯
⎯
⎯
1
Unit
Unit
mΩ
MΩ
mS
μA
μA
pF
μA
μA
pF
Ω
V
V
V
S
V
V