SSM6E01TU_07 TOSHIBA [Toshiba Semiconductor], SSM6E01TU_07 Datasheet
SSM6E01TU_07
Related parts for SSM6E01TU_07
SSM6E01TU_07 Summary of contents
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Silicon P-Channel MOS Type (U-MOS II) + N-Channel MOS Type (Planer) Load Switch Applications • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low R and low-voltage operation DS ...
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Handling Precaution This product has a MOS structure and is sensitive to electrostatic discharge. When handling individual devices (that have not yet been mounted on a PCB), ensure that the environment is protected against static electricity. Operators should wear anti-static ...
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Q1 Electrical Characteristics Characteristics Forward voltage (diode) Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Note 3: Pulse test Q2 Electrical Characteristics Characteristics Gate leakage current Drain-Source breakdown ...
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Q1 (Pch MOSFET) I – −2 −4 V −2.0 V −10 V −1.5 −1 −0.5 0 −0.5 −1 0 Drain-Source voltage V R – (ON) D 0.5 Common source Ta = 25°C 0.4 0.3 0.2 ...
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Q1 (Pch MOSFET) ⎪Y ⎪ – 0.1 0.01 −1 −10 −100 Drain current I D Dynamic input characteristics −10 Common source −1.0 A − 25°C − −10 ...
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Q2 (Nch MOSFET) I – 100 2.5 2.0 80 1.9 60 1 Drain-Source voltage V I – 100 Common source ...
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Q2 (Nch MOSFET) R – (ON Drain current – (ON) 10 Common source ...
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RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...