2SK3467-ZK NEC [NEC], 2SK3467-ZK Datasheet

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2SK3467-ZK

Manufacturer Part Number
2SK3467-ZK
Description
SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE
Manufacturer
NEC [NEC]
Datasheet

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Document No.
Date Published
Printed in Japan
DESCRIPTION
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (Pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Note PW
The 2SK3467 is N-Channel MOS FET device that features a
4.5 V drive available
Low on-state resistance
R
Low gate charge
Q
Built-in gate protection diode
Surface mount device available
DS(on)1
G
= 55 nC TYP. (I
D14991EJ1V0DS00 (1st edition)
March 2001 NS CP(K)
= 6.0 m MAX. (V
10 s, Duty Cycle
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
C
D
Note
= 80 A, V
= 25°C)
DS
A
C
GS
= 25°C)
= 25°C)
GS
= 0 V)
= 0 V)
= 10 V, I
1%
DD
= 16 V, V
N-CHANNEL POWER MOS FET
V
V
I
I
P
P
T
T
D
D(DC)
D(pulse)
ch
stg
DSS
GSS
T1
T2
= 40 A)
A
= 25
GS
INDUSTRIAL USE
= 10 V)
DATA SHEET
°C
)
SWITCHING
55 to +150
MOS FIELD EFFECT TRANSISTOR
150
1.5
20
320
76
20
80
°C
°C
W
W
V
V
A
A
ORDERING INFORMATION
PART NUMBER
2SK3467-ZK
2SK3467
(TO-220AB)
2SK3467
(TO-263)
TO-263(MP-25ZK)
TO-220AB
PACKAGE
©
2001

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2SK3467-ZK Summary of contents

Page 1

... Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14991EJ1V0DS00 (1st edition) Date Published March 2001 NS CP(K) Printed in Japan DATA SHEET MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3467- ° DSS V ...

Page 2

... di/dt = 100 A/ s TEST CIRCUIT 2 GATE CHARGE V GS 90% 10 90% 10 d(on) r d(off off Data Sheet D14991EJ1V0DS 2SK3467 MIN. TYP. MAX. UNIT 1.5 2 4.8 6.0 m 6.7 9.5 m 2800 pF 1200 pF 600 ...

Page 3

... 0.1 0.01 0.1 110 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 20 Pulsed Pulsed Data Sheet D14991EJ1V0DS 2SK3467 T = 50˚C ch 25˚C 25˚C 75˚C 150˚ 150˚C ch 75˚C 25˚C 25˚C 50˚ 100 I - Drain Current - ...

Page 4

... MHz 100 C iss oss 10 C rss 1 0.1 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 10 Q Data Sheet D14991EJ1V0DS 2SK3467 = 0.8 1.2 1.6 2.0 t d(off d(on 100 Drain Current - ...

Page 5

... PW - Pulse Width - sec TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 160 Case Temperature - ˚C C 100 R th(ch-A) R th(ch-C) Single Pulse 100 100 1000 Data Sheet D14991EJ1V0DS 2SK3467 100 120 140 160 = 83.3˚C/W = 1.65˚C/W 5 ...

Page 6

... When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 2)TO-263 (MP-25ZK) 10.0±0.2 0.4 No plating 1.3±0.2 8.4 TYP. 4 2.54 2.8±0 Data Sheet D14991EJ1V0DS 2SK3467 4.45±0.2 1.3±0.2 0.025 to 0.25 0.7±0.15 0.25 3 1.Gate 2.Drain 3.Source 4.Fin (Drain) ...

Page 7

... Data Sheet D14991EJ1V0DS 2SK3467 7 ...

Page 8

... NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Please check with an NEC sales representative for 2SK3467 The M8E 00. 4 ...

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