2SK3453_06 TOSHIBA [Toshiba Semiconductor], 2SK3453_06 Datasheet

2SK3453_06

Manufacturer Part Number

2SK3453_06

Description

Silicon N Channel MOS Type Switching Regulator Applications

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SK3453_06.pdf (6 pages)

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Switching Regulator Applications

•

Absolute Maximum Ratings

Thermal Characteristics

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

Low drain-source ON resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement model: V

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)

= 90 V, T

Pulse

= 20 kΩ)

DSS

= 25°C (initial), L = 7.5 mH, R

(Note 1)

(Note 2)

(Note 1)

= 2.0~4.0 V (V

= 100 μA (max) (V

(Ta = 25°C)

DS (ON)

Symbol

DGR

GSS

DSS

stg

2SK3453

| = 7.0 S (typ.)

Symbol

th (ch-a)

th (ch-c)

= 0.72 Ω (typ.)

= 10 V, I

= 700 V)

−55~150

Rating

700

±30

420

150

= 1 mA)

Max

1.56

41.6

= 25 Ω, I

Unit

°C

°C/W

Unit

= 10 A

Weight: 5.8 g (typ.)

JEDEC

JEITA

TOSHIBA

2-16F1B

2006-11-08

―

2SK3453

Unit: mm

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2SK3453_06 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) Switching Regulator Applications • Low drain-source ON resistance: R • High forward transfer admittance: |Y • Low leakage current 100 μA (max) (V DSS • Enhancement model: V ...

Page 2

Electrical Characteristics Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF ...

Page 3

Common source 25°C 8 Pulse test Drain-source voltage V (V) DS − ...

Page 4

(ON) 10 Common source Pulse test 2 −80 − Case temperature Tc (°C) Capacitance – 5000 ...

Page 5

Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse 0.001 10 μ 100 μ Safe operating area 100 max (pulsed max (continuous operation ...

Page 6

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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