2SK3453_06 TOSHIBA [Toshiba Semiconductor], 2SK3453_06 Datasheet
2SK3453_06
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2SK3453_06 Summary of contents
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) Switching Regulator Applications • Low drain-source ON resistance: R • High forward transfer admittance: |Y • Low leakage current 100 μA (max) (V DSS • Enhancement model: V ...
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Electrical Characteristics Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF ...
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Common source 25°C 8 Pulse test Drain-source voltage V (V) DS − ...
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(ON) 10 Common source Pulse test 2 −80 − Case temperature Tc (°C) Capacitance – 5000 ...
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Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse 0.001 10 μ 100 μ Safe operating area 100 max (pulsed max (continuous operation ...
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RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...