2SK3446TZ-E RENESAS [Renesas Technology Corp], 2SK3446TZ-E Datasheet - Page 4

• Manufacturer Part Number: 2SK3446TZ-E
• Description: Silicon N Channel Power MOS FET Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

2SK3446
Rev.8.00 Sep 07, 2005 page 4 of 6
1000
300
100
Static Drain to Source on State Resistance
160
120
30
10
80
40
3
1
5
4
3
2
1
0
–25
0
0.1
0
V
di / dt = 100 A / µs
V
Reverse Drain Current
Pulse Test
GS
I
GS
D
V
Dynamic Input Characteristics
Case Temperature
DS
Body-Drain Diode Reverse
= 1 A
4 V
0
= 2.5 V
Gate Charge
= 0, Ta = 25°C
2
0.3
25
V
vs. Temperature
Recovery Time
DD
V
I
D
GS
= 100 V
4
50
= 1 A
50 V
25 V
I
1
D
= 1 A
75
V
6
DD
Qg (nC)
0.5 A
= 100 V
100 125 150
0.5 A
Tc (°C)
3
I
50 V
25 V
DR
0.2 A
8
0.2 A
(A)
10
10
8
6
4
2
0
1000
0.03
0.01
300
100
100
0.3
0.1
10
30
10
30
10
0.01 0.03
3
1
3
1
3
1
0.1
0
Drain to Source Voltage
Forward Transfer Admittance vs.
t
f
Tc = –25°C
Switching Characteristics
Drain to Source Voltage
Typical Capacitance vs.
10
Drain Current
Drain Current
0.3
0.1
t
Drain Current
d(off)
75°C
20
V
PW = 5 µs, duty ≤ 1 %
Coss
Crss
Ciss
GS
0.3
1
= 4 V, V
t
t
d(on)
r
30
I
I
25°C
D
D
1
V
Pulse Test
DD
V
f = 1 MHz
3
DS
(A)
(A)
GS
V
40
= 30 V
DS
= 10 V
3
= 0
(V)
10
50
10