2SK3446TZ-E RENESAS [Renesas Technology Corp], 2SK3446TZ-E Datasheet - Page 3

• Manufacturer Part Number: 2SK3446TZ-E
• Description: Silicon N Channel Power MOS FET Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

2SK3446
Main Characteristics
Rev.8.00 Sep 07, 2005 page 3 of 6
2.5
2.0
1.5
1.0
0.5
1.6
1.2
0.8
0.4
0
3
2
1
0
0
Drain to Source Saturation Voltage vs.
0
0
0
Drain to Source Voltage
Gate to Source Voltage
Pulse Test
Power vs. Temperature Derating
Ambient Temperature
Typical Output Characteristics
3 V
Gate to Source Voltage
4 V
2
2
50
4
4
100
6
6
2.5 V
V
Pulse Test
GS
150
Ta (°C)
I
V
V
D
= 1.5 V
8
8
GS
DS
0.5 A
0.2 A
= 1 A
2 V
(V)
(V)
200
10
10
0.003
0.001
0.03
0.01
Static Drain to Source on State Resistance
0.5
0.2
0.1
0.3
0.1
10
10
5
4
3
2
1
0
5
2
1
3
1
0.1 0.3
0.1
0
Drain to Source Voltage
Gate to Source Voltage
V
Pulse Test
Pulse Test
Ta = 25°C
Typical Transfer Characteristics
Maximum Safe Operation Area
DS
Operation in
this area is
limited by R
V
= 10 V
GS
Drain Current
2
0.3
= 2.5 V
1
vs. Drain Current
4 V
DS(on)
4
3
1
10
6
I
30
D
Tc = –25°C
3
(A)
V
V
100
8
GS
100 µs
DS
75°C
25°C
1 ms
(V)
(V)
500
10
10