2SK3444_09 TOSHIBA [Toshiba Semiconductor], 2SK3444_09 Datasheet
2SK3444_09
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2SK3444_09 Summary of contents
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: R • High forward transfer admittance: |Y • Low leakage current 100 μA (V DSS ...
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Marking Part No. (or abbreviation code) K3444 Lot No. Note 4 Electrical Characteristics Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise ...
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I – Common 15 10 9.5 source Tc = 25°C 40 Pulse test 6 Drain-source voltage V ( – ...
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R – (ON) 160 Common source Pulse test 120 −80 − Case temperature Tc (°C) Capacitance – 10000 1000 100 ...
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Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0.01 10 μ 100 μ Safe operating area 1000 I D max (pulsed) * 100 100 μ max (continuous operation Tc ...
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RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...