2SK3444_09 TOSHIBA [Toshiba Semiconductor], 2SK3444_09 Datasheet

2SK3444_09

Manufacturer Part Number

2SK3444_09

Description

Switching Regulator, DC-DC Converter Applications

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SK3444_09.pdf (6 pages)

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Switching Regulator, DC-DC Converter Applications

Motor Drive Applications

•

Absolute Maximum Ratings

Thermal Characteristics

Low drain-source ON resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)

= 50 V, T

Characteristics

Pulse (Note 1)

= 20 kΩ)

DSS

= 25°C (initial), L = 1.26 mH, I

= 3.0 to 5.0 V (V

(Note 1)

(Note 2)

= 100 μA (V

DS (ON)

(Ta = 25°C)

Symbol

DGR

GSS

DSS

| = 10 S (typ.)

stg

2SK3444

= 200 V)

= 65 mΩ (typ.)

Symbol

= 10 V, I

th (ch-c)

−55 to 150

Rating

12.5

200

±30

100

125

488

150

= 1 mA)

Max

1.00

= 25 A, R

°C/W

Unit

°C

= 25 Ω

Notice:

Please use the S1 pin for gate input

signal return. Make sure that the

main current flows into the S2 pin.

Weight: 0.74 g (typ.)

JEDEC

JEITA

TOSHIBA

2-9F1B

SC-97

2009-09-29

―

2SK3444

Unit: mm

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2SK3444_09 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: R • High forward transfer admittance: |Y • Low leakage current 100 μA (V DSS ...

Page 2

Marking Part No. (or abbreviation code) K3444 Lot No. Note 4 Electrical Characteristics Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise ...

Page 3

I – Common 15 10 9.5 source Tc = 25°C 40 Pulse test 6 Drain-source voltage V ( – ...

Page 4

R – (ON) 160 Common source Pulse test 120 −80 − Case temperature Tc (°C) Capacitance – 10000 1000 100 ...

Page 5

Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0.01 10 μ 100 μ Safe operating area 1000 I D max (pulsed) * 100 100 μ max (continuous operation Tc ...

Page 6

RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...

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