2SK3439_06 TOSHIBA [Toshiba Semiconductor], 2SK3439_06 Datasheet - Page 2

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2SK3439_06

Manufacturer Part Number
2SK3439_06
Description
Silicon N Channel MOS Type DC-DC Converter Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
Marking
Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Note 4: Connect the S1 and S2 pins together, and ground them except during switching time measurement.
Continuous drain reverse current
Pulse drain reverse current
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Note 5: I
Unless otherwise specified, connect the S1 and S2 pins together, and ground them.
I
DR
DR
Characteristics
Characteristics
1, I
2, I
K3439
DRP
DRP
Rise time
Turn-on time
Fall time
Turn-off time
1: Current flowing between the drain and the S2 pin. Ensure that the S1 pin is left open.
2: Current flowing between the drain and the S1 pin. Ensure that the S2 pin is left open.
(Note 1, Note 5)
(Note 1, Note 5)
(Note 1, Note 5)
(Note 1, Note 5)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Note 4) (Ta = 25°C)
V
R
Symbol
Symbol
(BR) DSS
V
DS (ON)
I
I
I
I
C
I
DRP
I
DRP
C
|Y
C
Q
Q
GSS
DSS
DR
DR
DS2F
V
Q
t
t
Q
t
oss
on
off
t
t
iss
rss
gd
rr
th
gs
fs
r
f
rr
g
1
2
|
1
2
V
V
I
V
V
V
V
V
Duty < = 1%, t
V
I
I
dI
D
DR
DR
V
GS
DS
DS
GS
GS
DS
DS
DD
DR
= 10 mA, V
GS
2
1 = 75 A, V
= 75 A, V
(Note 5) (Ta = 25°C)
/dt = 50 A/μs
= ±16 V, V
= 30 V, V
= 10 V, I
= 10 V, I
= 4 V, I
= 10 V, I
= 10 V, V
≈ 34 V, V
10 V
0 V
Test Condition
Test Condition
D
w
V
D
D
D
GS
GS
GS
= 38 A
GS
GS
= 10 μs
DD
GS
= 1 mA
= 38 A
DS
= 38 A
= 0 V,
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
≈ 15 V
= 0 V
= 0 V
I
D
= 38 A
D
= 75 A
V
OUT
Min
Min
1.3
30
35
5450
1850
Typ.
Typ.
620
110
116
120
180
3.8
5.0
70
15
30
65
84
32
2006-11-16
2SK3439
−1.5
Max
Max
±10
100
300
2.5
5.0
10
75
1
4
Unit
Unit
nC
nC
μA
μA
pF
ns
ns
V
V
S
A
A
A
A
V

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