2SK3439_06 TOSHIBA [Toshiba Semiconductor], 2SK3439_06 Datasheet

2SK3439_06

Manufacturer Part Number

2SK3439_06

Description

Silicon N Channel MOS Type DC-DC Converter Applications

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SK3439_06.pdf (6 pages)

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DC-DC Converter Applications

Relay Drive and Motor Drive Applications

•

Absolute Maximum Ratings

Thermal Characteristics

Low drain-source ON resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature.

This transistor is an electrostatic-sensitive device. Please handle with caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

= 24 V, T

Characteristics

Pulse (t

= 20 kΩ)

DSS

= 25°C (initial), L = 100 μH, R

= 1.3 to 2.5 V (V

(Note 2)

(Note 1)

< =

= 100 µA (max) (V

1 ms)

DS (ON)

(Ta = 25°C)

Symbol

DGR

GSS

DSS

| = 70 S (typ.)

stg

2SK3439

= 3.8 mΩ (typ.)

Symbol

= 10 V, I

th (ch-c)

= 30 V)

−55 to 150

Rating

12.5

±20

300

125

731

150

= 1 mA)

= 25 Ω, I

Max

1.00

°C/W

Unit

°C

= 75 A

Weight: 0.74 g (typ.)

JEDEC

JEITA

TOSHIBA

Notice:

Please use the S1 pin for gate

input signal return. Make

sure that the main current

flows into the S2 pin.

2-9F1B

SC-97

2006-11-16

―

2SK3439

Unit: mm

Related parts for 2SK3439_06

2SK3439_06 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) DC-DC Converter Applications Relay Drive and Motor Drive Applications • Low drain-source ON resistance: R • High forward transfer admittance: |Y • Low leakage current 100 µA (max) ...

Page 2

Marking Part No. (or abbreviation code) K3439 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Electrical Characteristics Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance ...

Page 3

I – 100 Common source 25°C 8 Pulse test 2 0.2 0.4 0.6 0.8 Drain-source voltage V ( – V ...

Page 4

R – (ON) 6 Common source Pulse test −80 − Case temperature Tc (°C) Capacitance – 10000 ...

Page 5

Duty = 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 Single 0.01 0.00001 0.0001 Safe operating area 300 I D max (pulsed) * 100 μ max (continuous) 100 operation ...

Page 6

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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