STM8L151K6U3 STMICROELECTRONICS [STMicroelectronics], STM8L151K6U3 Datasheet - Page 73

• Manufacturer Part Number: STM8L151K6U3
• Description: 8-bit ultralow power MCU, up to 32 KB Flash, 1 KB Data EEPROM RTC, LCD, timers, USART, I2C, SPI, ADC, DAC, comparators
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

STM8L151xx, STM8L152xx
8.3.5
Table 31.
1. Data based on characterization results, not tested in production.
2. Retention guaranteed after cycling is 10 years @ 55 °C.
3. Retention guaranteed after cycling is 1 year @ 55 °C.
4. Data based on characterization performed on the whole data memory.
Symbol
N
V
t
I
t
prog
prog
RET
RW
DD
Operating voltage
(all modes, read/write/erase)
Programming time for 1 or 128 bytes (block)
erase/write cycles (on programmed byte)
Programming time for 1 to 128 bytes (block)
write cycles (on erased byte)
Programming/ erasing consumption
Data retention (program memory) after 10000
erase/write cycles at T
Data retention (data memory) after 10000
erase/write cycles at T
Data retention (data memory) after 10000
erase/write cycles at T
Erase/write cycles (program memory)
Erase/write cycles (data memory)
Flash program memory
Memory characteristics
T
Table 30.
1. Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware
Flash memory
A
Symbol
= -40 to 125 °C unless otherwise specified.
V
registers (only in Halt mode). Guaranteed by characterization, not tested in production.
RM
RAM and hardware registers
Parameter
Data retention mode
A
A
A
=+85 °C
=+85 °C
=+85 °C
Parameter
Doc ID 15962 Rev 2
(1)
Halt mode (or Reset)
T
T
A
A
=+25 °C, V
=+25 °C, V
f
SYSCLK
Conditions
See notes
See notes
T
T
T
Conditions
RET
RET
RET
=+55 °C
=+55 °C
=+85 °C
= 16 MHz
DD
DD
(1)(2)
(1)(3)
= 3.0 V
= 1.8 V
Min
1.4
TBD
TBD
TBD
TBD
TBD
1.65
Min
(4)
(1)
(1)
(1)
(1)
(1)
Electrical parameters
Typ
TBD
TBD
Typ
Max
TBD
TBD
Max
3.6
(1)
kcycles
years
Unit
73/101
Unit
mA
ms
ms
V
V