NCP5106A ONSEMI [ON Semiconductor], NCP5106A Datasheet - Page 5

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NCP5106A

Manufacturer Part Number
NCP5106A
Description
High Voltage, High and Low Side Driver
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet

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1. Parameter guaranteed by design.
2. Turn−off propagation delay @ Vbridge = 600 V is guaranteed by design.
3. See characterization curve for Dt parameters variation on the full range temperature.
4. Version B integrates a dead time in order to prevent any cross conduction between DRV_HI and DRV_LO. See timing diagram of Figure 10.
5. Timing diagram definition see: Figure 7, Figure 8 and Figure 9.
Output high short circuit pulsed current V
Output low short circuit pulsed current V
Output resistor (Typical value @ 25°C) Source
Output resistor (Typical value @ 25°C) Sink
High level output voltage, V
Low level output voltage V
Turn−on propagation delay (Vbridge = 0 V)
Turn−off propagation delay (Vbridge = 0 V or 50 V) (Note 2)
Output voltage rise time (from 10% to 90% @ V
Output voltage fall time (from 90% to 10% @V
Propagation delay matching between the High side and the Low side
@ 25°C (Note 3)
Internal fixed dead time (only valid for B version) (Note 4)
Minimum input width that changes the output
Maximum input width that does not change the output
Low level input voltage threshold
Input pull−down resistor (V
High level input voltage threshold
Logic “1” input bias current @ V
Logic “0” input bias current @ V
V
V
Hysteresis on V
Vboot Start−up voltage threshold reference to bridge pin
(Vboot_stup = Vboot − Vbridge)
Vboot UV Shut−down voltage threshold
Hysteresis on Vboot
Leakage current on high voltage pins to GND
(V
Consumption in active mode (V
both driver outputs)
Consumption in inhibition mode (V
V
Vboot current consumption in inhibition mode
ELECTRICAL CHARACTERISTIC
OUTPUT SECTION
DYNAMIC OUTPUT SECTION
INPUT SECTION
SUPPLY SECTION
CC
CC
CC
BOOT
UV Start−up voltage threshold
UV Shut−down voltage threshold
current consumption in inhibition mode
= V
BRIDGE
CC
= DRV_HI = 600 V)
DRV_XX
IN
BIAS
< 0.5 V)
CC
−V
IN_XX
IN_XX
CC
@ I
DRV_XX
= Vboot, fsw = 100 kHz and 1 nF load on
Rating
= Vboot)
= 5 V @ 25°C
= 0 V @ 25°C
DRV_XX
DRV
(V
DRV
@ I
CC
= V
= 0 V, PW v 10 ms (Note 1)
= 20 mA
DRV_XX
CC
= V
CC
CC
= 15 V) with 1 nF load
boot
, PW v 10 ms (Note 1)
= 15 V) with 1 nF load
= 15 V, V
= 20 mA
http://onsemi.com
GND
= V
5
bridge
, −40°C < T
Vboot_shtdwn
Vboot_shtdwn
V
Vboot_stup
I
V
V
CC
DRVsource
I
Symbol
I
V
HV_LEAK
V
DRVsink
CC
CC
ICC1
ICC2
ICC3
ICC4
DRV_H
t
t
R
R
DRV_L
t
_shtdwn
t
PW1
PW2
V
R
V
I
I
OFF
DT
ON
Dt
IN+
IN−
OH
tr
tf
_stup
_hyst
OL
IN
IN
IN
J
< 125°C, Outputs loaded with 1 nF)
Min
2.3
8.0
7.3
0.3
8.0
7.3
0.3
65
20
T
J
−40°C to 125°C
Typ
250
500
100
100
100
200
250
200
0.7
0.2
8.9
8.2
0.7
8.9
8.2
0.7
30
10
85
35
20
50
5
5
4
Max
170
170
160
190
400
1.6
0.6
0.8
2.0
9.9
9.1
9.9
9.1
60
20
75
35
50
25
40
5
Units
mA
mA
mA
kW
mA
mA
mA
mA
mA
mA
ns
ns
ns
ns
ns
ns
ns
ns
W
W
V
V
V
V
V
V
V
V
V
V

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