M48Z35-70MH1 STMICROELECTRONICS [STMicroelectronics], M48Z35-70MH1 Datasheet - Page 10

• Manufacturer Part Number: M48Z35-70MH1
• Description: 256 Kbit 32Kb x8 ZEROPOWER SRAM
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

M48Z35, M48Z35Y
POWER SUPPLY DECOUPLING and
UNDERSHOOT PROTECTION
I
switching, can produce voltage fluctuations, re-
sulting in spikes on the V
can be reduced if capacitors are used to store en-
ergy, which stabilizes the V
stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic by-
pass capacitor value of 0.1µF (as shown in Figure
9) is recommended in order to provide the needed
filtering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate neg-
ative voltage spikes on V
below V
tive spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, it is recommended to con-
nect a schottky diode from V
connected to V
1N5817 is recommended for through hole and
MBRS120T3 is recommended for surface mount.
10/18
CC
transients, including those produced by output
SS
by as much as one Volt. These nega-
CC
, anode to V
CC
CC
bus. These transients
that drive it to values
CC
CC
SS
bus. The energy
). Schottky diode
to V
SS
(cathode
Figure 9. Supply Voltage Protection
V CC
0.1 F
V CC
V SS
DEVICE
AI02169