KM68257C-12 SAMSUNG [Samsung semiconductor], KM68257C-12 Datasheet - Page 3

• Manufacturer Part Number: KM68257C-12
• Description: 32Kx8 Bit High Speed Static RAM(5V Operating(, Evolutionary Pin out. Operated at Commercial Temperature Range.
• Manufacturer: SAMSUNG [Samsung semiconductor]

KM68257C/CL
ABSOLUTE MAXIMUM RATINGS*
* Stresses greater than those listed under "Absolute Maximum Rating" may cause permanent damage to the device. This is a stress ra ting only and func-
RECOMMENDED DC OPERATING CONDITIONS
* V
** V
DC AND OPERATING CHARACTERISTICS
* V
CAPACITANCE*
* NOTE : Capacitance is sampled and not 100% tested.
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage Level
Output High Voltage Level
Voltage on Any Pin Relative to V
Voltage on V
Power Dissipation
Storage Temperature
Operating Temperature
tional operation of the device at these at these or any other conditions above those indicated in the operating sections of thi s specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Supply Voltage
Ground
Input Low Voltage
Input Low Voltage
Input/Output Capacitance
Input Capacitance
IL
CC
IH
(Min) = -2.0(Pulse Width 10ns) for I 20
=5.0V 5% Temp.=25 C
(Max) = V
Parameter
Parameter
CC+
CC
Item
2.0V(Pulse Width 10ns) for I 20
Supply Relative to V
Parameter
(T
A
=25 C, f=1.0MHz)
SS
Symbol
SS
V
I
V
V
§Ì
I
I
I
SB
OH1*
I
CC
LO
SB
LI
OL
OH
Symbol
1
Symbol
V
V
V
V
C
CC
SS
C
IH
IL
§Ì
I/O
IN
V
CS=V
V
Min. Cycle, 100% Duty
CS=V
I
Min. Cycle, CS=V
f=0MHz, CS V
V
I
I
I
OUT
OL
OH
OH1
IN
OUT
IN
=8mA
=-4mA
= V
=0mA
=0.1mA
V
= V
IH
IL,
CC
SS
or OE=V
V
-0.2V or V
SS
IN
to V
V
(T
Symbol
to V
= V
IN
T
A
V
CC
Test Conditions
, V
P
-0.5*
T
Test Conditions
CC
STG
Min
4.5
2.2
=0 to 70 C,V
CC
IH
CC
D
A
0
IH
OUT
- 3 -
-0.2V,
IH
or V
or WE=V
IN
V
V
(T
I/O
IN
A
IL,
0.2V
=0V
=0V
=0 to 70 C)
IL
CC
=5.0V 10% unless otherwise specified)
Typ
5.0
0
-
-
Normal
-0.5 to 7.0
-0.5 to 7.0
-65 to 150
L-ver
12ns
15ns
20ns
Rating
0 to 70
1.0
MIN
-
-
V
Min
CC
2.4
-2
-2
-
-
-
-
-
-
-
-
Max
5.5
0.8
+0.5**
0
PRELIMINARY
Max
8
7
CMOS SRAM
Max
3.95
165
150
140
0.1
0.4
40
2
2
2
-
Unit
W
February-1996
V
V
C
C
Unit
V
V
V
V
Unit
pF
pF
Unit
§Ì
§Ì
§Ì
Rev 3.0
V
V
V
A
A