AP50L02P A-POWER [Advanced Power Electronics Corp.], AP50L02P Datasheet

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AP50L02P

Manufacturer Part Number
AP50L02P
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Manufacturer
A-POWER [Advanced Power Electronics Corp.]
Datasheet
▼ ▼ ▼ ▼ Low Gate Charge
▼ ▼ ▼ ▼ Simple Drive Requirement
▼ ▼ ▼ ▼ Fast Switching
Data & specifications subject to change without notice
V
V
I
I
I
P
T
T
Rthj-case
Rthj-amb
Description
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP50L02P) is available for low-profile applications.
Absolute Maximum Ratings
Thermal Data
D
D
DM
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
DS
GS
D
STG
J
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Max.
Max.
G
D
-55 to 150
-55 to 150
Rating
BV
R
I
S
± 20
D
44.6
0.36
G D
140
25
40
27
DS(ON)
DSS
Value
2.8
62
S
AP50L02S/P
TO-220(P)
TO-263(S)
17mΩ
Units
W/℃
℃/W
℃/W
200218032
25V
40A
Unit
W
V
V
A
A
A

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AP50L02P Summary of contents

Page 1

... The TO-263 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP50L02P) is available for low-profile applications. Absolute Maximum Ratings Symbol V Drain-Source Voltage ...

Page 2

AP50L02S/P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage ...

Page 3

T = 140 120 100 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ...

Page 4

AP50L02S Case Temperature ( c Fig 5. Maximum Drain Current v.s. Case Temperature 1000 100 = Single Pulse (V) DS ...

Page 5

I =20A =12V DS V =16V =20V Total Gate Charge (nC) G Fig 9. Gate Charge Characteristics 100 10 o ...

Page 6

AP50L02S Fig 13. Switching Time Circuit Fig 15. Gate Charge Circuit V 90 THE DS ...

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