AP12L02H A-POWER [Advanced Power Electronics Corp.], AP12L02H Datasheet
AP12L02H
Related parts for AP12L02H
AP12L02H Summary of contents
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... Thermal Data Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP12L02H/J BV 25V DSS R 85mΩ DS(ON) I 12A TO-252( TO-251(J) S Rating Units 25 ± ...
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... AP12L02H/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 3. On-Resistance v.s. Gate Voltage 18 10V 8.0V T 6. =4. 0.0 3.0 4.0 Fig 2. Typical Output Characteristics 2 I =6A D =25 ℃ ℃ ℃ ℃ 1.4 0.8 0.2 14 -50 Fig 4. Normalized On-Resistance AP12L02H/J o =150 1.0 2.0 3 Drain-to-Source Voltage ( = =10V 100 Junction Temperature ( C) j v.s. Junction Temperature 10V 8.0V 6.0V 5 ...
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... AP12L02H Case Temperature ( c Fig 5. Maximum Drain Current v.s. Case Temperature 100 = Single Pulse 0.1 0 (V) DS Fig 7. Maximum Safe Operating Area 100 125 150 o C) 100us 1ms 10ms 100ms 1s 10 100 Fig 8. Effective Transient Thermal Impedance ...
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... Tj=150 C 1 0.1 0 0.5 V (V) SD Fig 11. Forward Characteristic of Reverse Diode 1000 100 Fig 10. Typical Capacitance Characteristics 3 2.5 o Tj= 1.5 1 -50 1 1.5 Fig 12. Gate Threshold Voltage v.s. AP12L02H/J f=1.0MHz Ciss Coss Crss ( 100 Junction Temperature ( Junction Temperature 29 150 ...
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... AP12L02H Fig 13. Switching Time Circuit Fig 15. Gate Charge Circuit THE DS OSCILLOSCOPE 0.6 x RATED THE OSCILLOSCOPE 5V 0.8 x RATED d(off) d(on) r Fig 14. Switching Time Waveform ...