MT4C1M16C3 MICRON [Micron Technology], MT4C1M16C3 Datasheet - Page 7

• Manufacturer Part Number: MT4C1M16C3
• Description: FPM DRAM
• Manufacturer: MICRON [Micron Technology]

AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12; notes can be found on page 9); V
1 Meg x 16 FPM DRAM
D51_5V_B.p65 – Rev. B; Pub 3/01
AC CHARACTERISTICS
PARAMETER
Access time from column address
Column-address hold time (referenced to RAS#)
Column-address setup time
Row-address setup time
Column address to WE# delay time
Access time from CAS
Column-address hold time
CAS# pulse width
CAS# LOW to “Don’t Care” during Self Refresh
CAS# hold time (CBR Refresh)
Last CAS# going LOW to first CAS# to return HIGH
CAS# to output in Low-Z
CAS# precharge time
Access time from CAS# precharge
CAS# to RAS# precharge time
CAS# hold time
CAS# setup time (CBR Refresh)
CAS# to WE# delay time
WRITE command to CAS# lead time
Data-in hold time
Data-in setup time
Output disable
Output enable
OE# hold time from WE# during
READ-MODIFY-WRITE cycle
Output buffer turn-off delay
OE# setup prior to RAS# during HIDDEN Refresh cycle
FAST-PAGE-MODE READ or WRITE cycle time
FAST-PAGE-MODE READ-WRITE cycle time
Access time from RAS#
RAS# to column-address delay time
Row-address hold time
RAS# pulse width
RAS# pulse width (FAST PAGE MODE)
RAS# pulse width (Self Refresh)
Random READ or WRITE cycle time
RAS# to CAS# delay time
READ command hold time (referenced to CAS)
READ command setup time
Refresh period (1,024 cycles)
Refresh period (1,024 cycles) “S” version
RAS# precharge time
RAS# to CAS# precharge time
RAS# precharge time (Self Refresh)
READ command hold time (referenced to RAS#)
RAS# hold time
READ-WRITE cycle time
SYMBOL
t
t
t
t
t
t
t
PRWC
t
t
t
t
t
t
t
t
t
t
AWD
t
t
t
CLCH
t
t
t
t
t
CWD
t
t
RASP
RASS
t
t
t
t
t
t
t
t
t
RWC
CAH
CHD
CWL
t
OEH
ORD
RAD
RAH
t
t
CAC
CHR
CPA
t
t
t
OFF
RAC
RCD
RCH
RRH
ASC
ASR
CAS
t
CRP
CSH
t
RAS
t
t
RPC
RSH
CLZ
CSR
RCS
REF
REF
RPS
AA
DH
OD
AR
OE
CP
DS
PC
RC
RP
7
MIN
100
116
38
42
15
10
38
28
20
47
50
50
84
11
30
90
13
0
0
8
8
8
0
8
5
5
8
8
0
0
8
0
0
9
9
0
0
5
0
CC
-5
(MIN) ≤ V
125,000
Micron Technology, Inc., reserves the right to change products or specifications without notice.
10,000
10,000
MAX
128
25
15
28
12
12
12
50
16
CC
≤ V
MIN
100
104
105
140
45
49
10
10
15
10
10
45
35
10
10
10
25
56
12
10
60
60
14
40
15
0
0
0
5
5
5
0
0
0
0
0
0
5
0
CC
(MAX)
-6
125,000
10,000
10,000
MAX
128
30
15
35
15
15
15
60
16
1 MEG x 16
FPM DRAM
UNITS
ms
ms
©2001, Micron Technology, Inc.
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
17, 26, 29
11, 17, 23
NOTES
32, 35
26, 29
18, 27
23, 29
19, 29
19, 29
14, 27
16, 28
4, 28
4, 27
27
18
29
27
30
30
28
28
28
22
20
31
31
20
27
16
36