M48T59 ST Microelectronics, M48T59 Datasheet - Page 4

• Manufacturer Part Number: M48T59
• Description: 64 Kbit 8Kb x8 TIMEKEEPER SRAM
• Manufacturer: ST Microelectronics

M48T59, M48T59Y, M48T59V
Table 5. Capacitance
(T
Note: 1. Effective capacitance measured with power supply at 5V.
Table 6. DC Characteristics
(T
Note: 1. Outputs deselected.
Table 7. Power Down/Up Trip Points DC Characteristics
(T
Note: 1. All voltages referenced to V
4/21
Symbol
I
V
A
A
A
I
Symbol
LO
Symbol
I
I
V
V
LI
I
V
CC1
CC2
C
IL
CC
V
= 25 °C)
= 0 to 70 °C or –40 to 85 °C; V
OH
= 0 to 70 °C or –40 to 85 °C)
OL
V
IH
C
t
IO
(1)
2. Sampled only, not 100% tested.
3. Outputs deselected.
2. Negative spikes of –1V allowed for up to 10ns once per cycle.
3. The IRQ/FT and RST pins are Open Drain.
2. Using larger M4T32-BR12SH6 SNAPHAT top (recommended for Industrial Temperature Range - grade 6 device).
PFD
(1)
(2)
DR
SO
IN
(3)
Input Leakage Current
Output Leakage Current
Supply Current
Supply Current (Standby)
TTL
Supply Current (Standby)
CMOS
Input Low Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage (IRQ/FT
and RST)
Output High Voltage
Input Capacitance
Input / Output Capacitance
Power-fail Deselect Voltage
Battery Back-up Switchover Voltage
Expected Data Retention Time (at 25 °C)
Parameter
(3)
(1, 2)
Parameter
SS
.
Parameter
CC
= 4.75V to 5.5V or 4.5V to 5.5V or 3.0V to 3.6V)
0V
Test Condition
E = V
0V
Outputs open
I
I
I
OL
OH
OL
E = V
V
= 2.1mA
V
CC
= 10mA
= –1mA
OUT
IN
– 0.2V
IH
M48T59/Y
M48T59Y
M48T59V
M48T59V
V
M48T59
Grade 1
Grade 6
V
CC
CC
Test Condition
V
–0.3
Min
V
2.2
2.4
OUT
IN
(1)
M48T59/Y
10
= 0V
Min
4.5
4.2
2.7
= 0V
7
(2)
V
CC
Max
0.8
0.4
0.4
±1
±1
50
3
3
+ 0.3
V
PFD
4.35
Typ
4.6
2.9
3.0
–100mV
Min
–0.3
Min
2.4
2
M48T59V
Max
Max
4.75
V
4.5
3.0
10
10
CC
Max
0.8
0.4
0.4
±1
±1
30
2
1
+ 0.3
YEARS
YEARS
Unit
Unit
V
V
V
V
V
pF
pF
Unit
mA
mA
mA
µA
µA
V
V
V
V
V