nup4301 ON Semiconductor, nup4301 Datasheet

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nup4301

Manufacturer Part Number
nup4301
Description
Low Capacitance Diode Array For Esd Protection In Four Data Lines
Manufacturer
ON Semiconductor
Datasheet

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NUP4301MR6T1
Low Capacitance Diode
Array for ESD Protection in
Four Data Lines
provide protection for sensitive components from possible harmful
electrical transients; for example, ESD (electrostatic discharge).
Features
Applications
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0  0.75  0.062 in.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 3
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward
Repetitive Peak Forward Current
Non−Repetitive Peak Forward Current
NUP4301MR6T1 is a MicroIntegrationt device designed to
Low Capacitance (1.5 pf Maximum Between I/O Lines)
Single Package Integration Design
Provides ESD Protection for JEDEC Standards JESD22
Protection for IEC61000−4−2 (Level 4)
Ensures Data Line Speed and Integrity
Fewer Components and Less Board Space
Direct the Transient to Either Positive Side or to the Ground
Pb−Free Package is Available
USB 1.1 and 2.0 Data Line Protection
T1/E1 Secondary IC Protection
T3/E3 Secondary IC Protection
HDSL, IDSL Secondary IC Protection
Video Line Protection
Microcontroller Input Protection
Base Stations
I
2
Current (Note 1)
(averaged over any 20 ms period)
t = 1.0 ms
t = 1.0 ms
t = 1.0 S
C Bus Protection
Machine Model = Class C
Human Body Model = Class 3B
8.0 kV (Contact)
15 kV (Air)
Rating
(Each Diode) (T
J
= 25°C unless otherwise noted)
I
Symbol
FM(surge)
V
I
I
I
F(AV)
FRM
FSM
V
RRM
I
F
R
Value
200
500
715
450
2.0
1.0
0.5
70
70
1
mAdc
mAdc
Unit
Vdc
mA
mA
V
A
†For information on tape and reel specifications,
NUP4301MR6T1
NUP4301MR6T1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation may vary depending
upon manufacturing location.
(Note: Microdot may be in either location.
Device
1/O 3
I/O 1
V
ORDERING INFORMATION
N
64
M
G
PIN CONFIGURATION
2
MARKING DIAGRAM
http://onsemi.com
AND SCHEMATIC
1
6
CASE 318F
= Device Code
= Date Code*
= Pb−Free Package
(Pb−Free)
PLASTIC
Package
TSOP−6
TSOP−6
TSOP−6
5
64M G
4
Publication Order Number:
G
1
2
3
NUP4301MR6T1/D
3000/Tape & Reel
3000/Tape & Reel
Shipping
6 I/O
5 V
4 I/O
P

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nup4301 Summary of contents

Page 1

... NUP4301MR6T1 Low Capacitance Diode Array for ESD Protection in Four Data Lines NUP4301MR6T1 is a MicroIntegrationt device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD (electrostatic discharge). Features • Low Capacitance (1.5 pf Maximum Between I/O Lines) • Single Package Integration Design • ...

Page 2

... 1.0 MHz) R Forward Voltage 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. 100 T = 85° 1 0.1 0.2 0.4 0.6 0 FORWARD VOLTAGE (VOLTS) F Figure 1. Forward Voltage 1.75 1.5 1.25 1.0 0.75 NUP4301MR6T1 Symbol R qJA stg (T = 25°C unless otherwise noted) (Each Diode) J Symbol V (BR Vdc Vdc 150° ...

Page 3

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NUP4301MR6T1 PACKAGE DIMENSIONS TSOP−6 CASE 318F−05 ISSUE L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...

Page 4

... USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NUP4301MR6T1/D ...

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