lh5p832 Sharp Microelectronics of the Americas, lh5p832 Datasheet - Page 4

• Manufacturer Part Number: lh5p832
• Manufacturer: Sharp Microelectronics of the Americas

LH5P832
AC CHARACTERISTICS
READ AND WRITE CYCLES
NOTES:
1. At least 200 s of pause time after power on should be given for
4
Random read, write cycle time
Read modify write cycle time
CE pulse width
CE precharge time
Address setup time
Address hold time
Read command hold time
Read command setup time
CE access time
OE access time
CE to output in Low-Z
OE to output in Low-Z
Output enable from end of write
Chip disable to output in High-Z
Output disable to output in High-Z
Write enable to output in High-Z
OE setup time
OE hold time
OE lead time
Write command pulse width
Write command setup time
Write command hold time
Data setup time from write
Data setup time from CE
Data hold time from write
Data hold time from CE
Transition time (rise and fall)
Refresh time interval
REFRESH CYCLE
Auto refresh cycle time
Refresh delay time from CE
Refresh pulse width (Auto refresh)
Refresh precharge time
(Auto refresh)
CE delay time from refresh active
(Auto refresh)
Refresh pulse width (Self refresh)
CE delay time from refresh
precharge (Self refresh)
proper device operation.
CE and OE/RFSH must be fixed at V
reached to the specified voltage level
and followed by at least 8 dummy cycles.
PARAMETER
IH
for 200 s from the V
1,2
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RMW
t
t
t
t
t
WCP
WCS
WCH
DSW
DHW
WHZ
t
t
t
t
RCH
RCS
CEA
OEA
WLZ
CHZ
OHZ
OES
OEH
DSC
DHC
t
RFD
CLZ
OLZ
OEL
REF
FAP
t
FCE
FAS
FRS
RC
CE
t
AS
AH
FC
t
FP
P
T
(V
CC
= 5.0 V 10%, T
8,000
MIN.
160
225
100
160
190
190
50
20
10
10
10
60
60
60
40
40
50
60
30
0
0
0
0
0
0
0
0
0
0
0
3
DD
160 ns
10,000
8,000
MAX.
100
2. AC characteristics are measured at t
3. Measured with a load circuit equivalent to 1TTL loads and
40
30
30
30
35
4
100 pF.
A
8,000
CMOS 256K (32K
MIN.
= 0 to 70 C)
190
280
120
190
225
225
60
30
10
10
10
85
85
85
50
50
60
80
30
0
0
0
0
0
0
0
0
0
0
0
3
190 ns
10,000
8,000
MAX.
120
50
35
35
35
35
4
UNIT
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
8) Pseudo-Static RAM
T
= 5 ns.
NOTE
3
3
2
2
2