gvt71256d18 ETC-unknow, gvt71256d18 Datasheet

no-image

gvt71256d18

Manufacturer Part Number
gvt71256d18
Description
256k Synchronous Burst Sram
Manufacturer
ETC-unknow
Datasheet
FEATURES
• Fast access times: 3.5, 3.8, and 4.0ns
• Fast clock speed: 166, 150, 133, and 117MHz
• Provide high performance 3-1-1-1 access rate
• Fast OE# access times: 3.5ns and 3.8ns
• Optimal for depth expansion (one cycle chip deselect to
• 3.3V -5% and +10% core power supply
• 2.5V or 3.3V I/O supply
• 5V tolerant inputs except I/O’s
• Clamp diodes to VSSQ at all inputs and outputs
• Common data inputs and data outputs
• BYTE WRITE ENABLE and GLOBAL WRITE control
• Three chip enables for depth expansion and address
• Address, data and control registers
• Internally self-timed WRITE CYCLE
• Burst control pins (interleaved or linear burst sequence)
• Automatic power-down for portable applications
• Low profile 119 lead, 14mm x 22mm BGA (Ball Grid
OPTIONS
• Timing
• Packages
Galvantech, Inc. 3080 Oakmead Village Drive, Santa Clara, CA 95051
Tel (408) 566-0688
Rev. 11/98
GALVANTECH
BURST SRAM
PIPELINED OUTPUT
SYNCHRONOUS
eliminate bus contention)
pipeline
Array) and 100 pin TQFP packages
3.5ns access/6.0ns cycle
3.8ns access/6.7ns cycle
4.0ns access/7.5ns cycle
4.0ns access/8.5ns cycle
119-lead BGA
100-pin TQFP
Fax (408) 566-0699 Web Site www.galvantech.com
MARKING
B
T
-3
-4
-5
-6
, INC.
256K X 18 SYNCHRONOUS BURST SRAM
GENERAL DESCRIPTION
employs high-speed, low power CMOS designs using
advanced
technology. Each memory cell consists of four transistors and
two high valued resistors.
SRAM cells with advanced synchronous peripheral circuitry
and a 2-bit counter for internal burst operation. All
synchronous inputs are gated by registers controlled by a
positive-edge-triggered clock input (CLK). The synchronous
inputs include all addresses, all data inputs, address-pipelining
chip enable (CE#), depth-expansion chip enables (CE2# and
CE2), burst control inputs (ADSC#, ADSP#, and ADV#),
write enables (WEL#, WEH#, and BWE#), and global write
(GW#).
and burst mode control (MODE). The data outputs (Q),
enabled by OE#, are also asynchronous.
address status processor (ADSP#) or address status controller
(ADSC#) input pins. Subsequent burst addresses can be
internally generated as controlled by the burst advance pin
(ADV#).
chip to initiate self-timed WRITE cycle. WRITE cycles can
be one to four bytes wide as controlled by the write control
inputs. Individual byte write allows individual byte to be
written. WEL# controls DQ1-DQ8 and DQP1. WEH#
controls DQ9-DQ16 and DQP2. WEL#, and WEH# can be
active only with BWE# being LOW. GW# being LOW causes
all bytes to be written. WRITE pass-through capability allows
written data available at the output for the immediately next
READ cycle. This device also incorporates pipelined enable
circuit for easy depth expansion without penalizing system
performance.
supply. All inputs and outputs are LVTTL compatible. The
device is ideally suited for 486, Pentium
PowerPC
wide synchronous data bus.
The Galvantech Synchronous Burst SRAM family
The GVT71256D18 SRAM integrates 262,144x18
Asynchronous inputs include the output enable (OE#)
Addresses and chip enables are registered with either
Address, data inputs, and write controls are registered on-
The GVT71256D18 operates from a +3.3V power
256K x 18 SRAM
+3.3V SUPPLY, FULLY REGISTERED
INPUTS AND OUTPUTS, BURST COUNTER
TM
systems and for systems that are benefited from a
triple-layer
polysilicon,
GVT71256D18
PowerPC is a trademark of IBM Corporation.
Pentium is a trademark of Intel Corporation.
Galvantech, Inc. reserves the right to change
double-layer
products or specifications without notice.
TM
, 680x0, and
metal

Related parts for gvt71256d18

gvt71256d18 Summary of contents

Page 1

... READ cycle. This device also incorporates pipelined enable circuit for easy depth expansion without penalizing system performance. The GVT71256D18 operates from a +3.3V power supply. All inputs and outputs are LVTTL compatible. The device is ideally suited for 486, Pentium PowerPC ...

Page 2

... X 18 SYNCHRONOUS BURST SRAM UPPER BYTE WRITE D Q LOWER BYTE WRITE D Q ENABLE Input Register Address Register CLR Binary Counter & Logic 2 GVT71256D18 Q OUTPUT REGISTER DQ1- DQ16 DQP1, DQP2 Galvantech, Inc. reserves the right to change products or specifications without notice. ...

Page 3

... CE# Input- Chip Enable: This active LOW input is used to enable the device and to gate ADSP#. Synchronous CE2# Input- Chip Enable: This active LOW input is used to enable the device. Synchronous 3 GVT71256D18 ...

Page 4

... No Connect: These signals are not internally connected. Third Address Fourth Address (internal) (internal) A...A10 A...A11 A...A11 A...A10 A...A00 A...A01 A...A01 A...A00 Third Address Fourth Address (internal) (internal) A...A10 A...A11 A...A11 A...A00 A...A00 A...A01 A...A01 A...A10 4 GVT71256D18 DESCRIPTION Galvantech, Inc. reserves the right to change products or specifications without notice. ...

Page 5

... BWE# WEH# WEL GVT71256D18 ADV# WRITE# OE# CLK L-H High L-H High L-H High L-H High L-H High L L-H High-Z ...

Page 6

... < VCC IL OUT VCC VCCQ SYM TYP or > Icc 150 SB2 SB3 I 40 SB4 ; VCC = MAX GVT71256D18 MIN MAX UNITS NOTES 2.0 VCC+0.3 V 2.0 4.6 V -0 2.4 V 0.4 V 3.135 3.6 V 3.135 VCC ...

Page 7

... MHz C I VCC = 3. CONDITIONS SYMBOL TQFP TYP Still air, soldered on 4. 1.125 inch 4-layer PCB JC OUTPUT LOW VOLTAGE m ax VOL (V) -105 -0.5 -105 0 -105 0.4 -83 0.8 -70 1.25 -30 1.6 -10 2.8 0 3.2 0 3.4 7 GVT71256D18 - 133MHz 117MHz MIN MAX MIN MAX UNITS 7.5 8.5 ns 2.8 3.4 ns 2.8 3.4 ns 4.0 4.0 ns 1.5 1 1.5 7.5 1.5 8.5 ns 3.8 3.8 ns ...

Page 8

... See Figures 1 and 2 15. Capacitance derating applies to capacitance different from the load capacitance shown in Fig / increases with greater t KQHZ is less o C and 8.5ns cycle time. 8 GVT71256D18 1.5V Fig. 1 OUTPUT LOAD EQUIVALENT 3.3v 317 351 Fig. 2 OUTPUT LOAD EQUIVALENT ...

Page 9

... Note: CE# active in this timing diagram means that all chip enables CE#, CE2, and CE2# are active. November 6, 1998 Rev. 11/98 , INC. 256K X 18 SYNCHRONOUS BURST SRAM READ TIMING OEQ t OELZ Q(A1) Q(A2) Q(A2+1) SINGLE READ 9 GVT71256D18 t H Q(A2+2) Q(A2+3) Q(A2) BURST READ Galvantech, Inc. reserves the right to change products or specifications without notice. Q(A2+1) ...

Page 10

... Note: CE# active in this timing diagram means that all chip enables CE#, CE2, and CE2# are active. November 6, 1998 Rev. 11/98 , INC. 256K X 18 SYNCHRONOUS BURST SRAM WRITE TIMING OEHZ D(A1) D(A2) D(A2+1) D(A2+1) BURST WRITE 10 GVT71256D18 D(A2+2) D(A2+3) D(A3) D(A3+1) BURST WRITE Galvantech, Inc. reserves the right to change products or specifications without notice. D(A3+2) ...

Page 11

... Note: CE# active in this timing diagram means that all chip enables CE#, CE2, and CE2# are active. November 6, 1998 Rev. 11/98 , INC. 256K X 18 SYNCHRONOUS BURST SRAM READ/WRITE TIMING Q(A1) Q(A2) D(A3) Q(A3) Pass Through Single Write 11 GVT71256D18 A5 Q(A4) Q(A4+1) Q(A4+2) D(A5) D(A5+1) Burst Read Burst Write Galvantech, Inc. reserves the right to change products or specifications without notice. ...

Page 12

... GALVANTECH 100 Pin TQFP Package Dimensions # 1 1.40 + 0.05 1.60 Max Note: All dimensions in Millimeters November 6, 1998 Rev. 11/98 , INC. 256K X 18 SYNCHRONOUS BURST SRAM 16.00 + 0.10 14.00 + 0.10 0.65 Basic 12 GVT71256D18 0.30 + 0.08 0.60 + 0.15 Galvantech, Inc. reserves the right to change products or specifications without notice. ...

Page 13

... Note: All dimensions in Millimeters November 6, 1998 Rev. 11/98 , INC. 256K X 18 SYNCHRONOUS BURST SRAM 22.00 + 0.20 20.32 1. BOTTOM VIEW 19.50 + 0.10 TOP VIEW SIDE VIEW 13 GVT71256D18 0.60 + 0.10 Galvantech, Inc. reserves the right to change products or specifications without notice. ...

Page 14

... Galvantech Prefix Part Number November 6, 1998 Rev. 11/98 , INC. 256K X 18 SYNCHRONOUS BURST SRAM 14 GVT71256D18 Speed (3 = 3.5ns access/6.0ns cycle 4 = 3.8ns access/6.7ns cycle 5 = 4.0ns access/7.5ns cycle 6 = 4.0ns access/8.5ns cycle) Package (B = 119 LEAD BGA 100 PIN TQFP) Galvantech, Inc. reserves the right to change products or specifications without notice. ...

Related keywords