mch6622 Sanyo Semiconductor Corporation, mch6622 Datasheet - Page 2

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mch6622

Manufacturer Part Number
mch6622
Description
N-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Continued from preceding page.
Package Dimensions
unit : mm
2173A
Switching Time Test Circuit
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
P.G
10V
0V
1.0
0.8
0.6
0.4
0.2
PW=10 s
D.C. 1%
0
0
V IN
0.2
0.65
Parameter
4
3
2.0
V IN
0.4
Drain-to-Source Voltage, V DS -- V
5
2
50
G
1
6
0.6
0.3
I D -- V DS
V DD =30V
0.8
D
6
1
S
1.0
I D =500mA
R L =60
5
2
0.15
MCH6622
1.2
4
3
V OUT
Symbol
t d (on)
t d (off)
V SD
1.4
Qgs
Qgd
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
Qg
t r
t f
1.6
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =30V, V GS =10V, I D =1A
V DS =30V, V GS =10V, I D =1A
V DS =30V, V GS =10V, I D =1A
I S =1A, V GS =0
1.8
IT05973
2.0
MCH6622
Conditions
Electrical Connection
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
V DS =10V
6
1
0.5
1.0
5
2
Gate-to-Source Voltage, V GS -- V
1.5
4
3
min
I D -- V GS
2.0
2.5
Ratings
Top view
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
typ
3.0
3.0
0.6
0.6
0.9
12
12
5
4
3.5
max
4.0
1.2
No.8249-2/4
4.5
IT05974
Unit
nC
nC
nC
ns
ns
ns
ns
V
5.0

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