mch6622 Sanyo Semiconductor Corporation, mch6622 Datasheet

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mch6622

Manufacturer Part Number
mch6622
Description
N-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Ordering number : ENN8249
MCH6622
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : FW
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
Symbol
Symbol
V GSS
V DSS
I GSS
I DSS
Coss
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Ciss
Crss
Tstg
I DP
Tch
yfs
I D
P D
I D =1mA, V GS =0
V DS =60V, V GS =0
V GS = 16V, V DS =0
V DS =10V, I D =1mA
V DS =10V, I D =0.5A
I D =0.5A, V GS =10V
I D =0.3A, V GS =4V
V DS =20V, f=1MHz
V DS =20V, f=1MHz
V DS =20V, f=1MHz
PW 10 s, duty cycle 1%
Mounted on a ceramic board (900mm
MCH6622
Conditions
Conditions
2
0.8mm) 1unit
min
0.45
31005PE TS IM TA-4278
1.2
60
Ratings
typ
Ratings
480
640
0.9
6.5
70
9
--55 to +150
Continued on next page.
max
150
0.8
630
900
60
20
2.6
10
1
4
1
No.8249-1/4
Unit
Unit
m
m
pF
pF
pF
W
V
V
A
A
V
V
S
C
C
A
A

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mch6622 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN MCH6622 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol ...

Page 2

... 1.0 0.8 0.6 0.4 0 0.2 0.4 0.6 0.8 1.0 1.2 Drain-to-Source Voltage MCH6622 Symbol Conditions t d (on) See specified Test Circuit See specified Test Circuit (off) See specified Test Circuit See specified Test Circuit =30V =10V =1A Qgs V DS =30V =10V =1A ...

Page 3

... Drain Current =30V 0.5 1.0 1.5 2.0 Total Gate Charge MCH6622 1200 Ta=25 C 1100 I D =0.5A 1000 900 800 700 600 500 400 300 200 100 --60 IT05975 =10V 1.0 ...

Page 4

... Ambient Temperature Note on usage : Since the MCH6622 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...

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